Enhanced characteristics in AlGaN-based deep ultraviolet light-emitting diodes with interval-graded barrier superlattice electron blocking layers

被引：0
作者：
Jiang, Zhiang [1 ,2 ,3 ]
Zhu, Youhua [1 ,2 ,3 ]
Xia, Changsheng [4 ]
Sheng, Yang [4 ]
Li, Yi [1 ,2 ,3 ]
机构：
[1] Nantong Univ, Sch Informat Sci & Technol, Nantong 226019, Peoples R China
[2] Nantong Univ, Sch Microelect, Nantong 226019, Peoples R China
[3] Nantong Univ, Sch Integrated Circuits, Nantong 226019, Peoples R China
[4] GMPT Co Ltd, 8th Floor,Bldg 4,26 Qiuyue Rd, Shanghai 201120, Peoples R China
来源：
MICRO AND NANOSTRUCTURES | 2024年 / 191卷
关键词：
AlGaN; Superlattice electron blocking layer; DUV LEDs; Polarization; IQE; POLARIZATION; PERFORMANCE; LEVEL; WATER; LEDS;
D O I：
10.1016/j.micrna.2024.207869
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In this paper, a deep ultraviolet light-emitting diode (DUV LED) at similar to 275 nm with an interval-graded barrier superlattice (IBSL) Electron Blocking Layer (EBL) has been proposed and numerically investigated. The IBSL EBL structure has greatly increased the carrier concentration within the active region. It has been shown that DUV LEDs with IBSL EBL structure exhibits transcendent electron blocking and hole injection capabilities compared to conventional DUV LEDs, which is attributed to the increased lattice matching and decreased polarization effects brought about by the smaller Al content difference between the superlattice barriers and wells. Consequently, compared to the conventional DUV LEDs at a 60 mA injection current, the internal quantum efficiency and the light output power of DUV LEDs with IBSL EBL have been enhanced by 34 % and 30 %, respectively.
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页数：7
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