Highly-improved formaldehyde gas sensitivity, selectivity and stability of Ce-doped In2O3 sensors at low temperature

被引：9
作者：
Lu, Z. J. [1 ]
Xu, J. C. [1 ]
Hong, B. [1 ]
Li, J. [1 ]
Zeng, Y. X. [1 ]
Peng, X. L. [1 ]
Chen, H. W. [1 ]
Wang, X. Q. [1 ]
机构：
[1] China Jiliang Univ, Coll Mat & Chem, Hangzhou 310018, Peoples R China
来源：
MATERIALS CHEMISTRY AND PHYSICS | 2024年 / 323卷
基金：
中国国家自然科学基金;
关键词：
Gas sensor; Ce-doping; Formaldehyde; Oxygen vacancies; SENSING PERFORMANCE; HYDROGEN; NANOWIRES; OXIDES; GATE;
D O I：
10.1016/j.matchemphys.2024.129661
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Formaldehyde, a prevalent indoor toxic gas, can quickly harm individuals when the concentration reaches 20 ppm. Therefore, the development of gas sensors with high selectivity and sensitivity to ppm formaldehyde is highly promising. Ce-doped In2O3 microtubes are prepared through environmentally friendly one-step hydrothermal method. After the characterization of microstructure, morphology and composition of Ce-doped In2O3 microtubes, the gas-sensing performance is investigated in detail. All results indicate that Ce-doping results in lattice defects and grain refinement, leading to the higher specific surface area and more oxygen vacancies. Cedoping greatly improves the formaldehyde gas-sensing performance of Ce-doped In2O3 sensors. 5Ce-In2O3 sensor the highest response value (563.07) to 10 ppm formaldehyde at the lower operating temperature of 210 degrees C, which is 4.59 times of In2O3 sensor at 230 degrees C. Moreover, Ce-doped In2O3 sensors exhibit the excellent selectivity, long-term stability and humidity stability. The overall-improved formaldehyde gas-sensing behavior of Ce-doped In2O3 sensors is attributed to more oxygen vacancies, larger specific surface area, reduced bandgap, Ce3+-> Ce4+ transition and Ce4+ donor doping due to Ce-doping.
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页数：10
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