Improved thermoelectric performance in wide temperature range of flexible moderately Ag-doped Bi0.5Sb1.5Te3 films

被引：1
作者：
Liang, Shaojun [1 ,2 ,3 ]
Shi, Yunfeng [4 ]
Zhang, Rensheng [1 ,2 ,3 ]
Zhu, Hanming [1 ,2 ,3 ]
Yue, Song [1 ,2 ,3 ]
机构：
[1] Jinan Univ, Dept Phys, Siyuan Lab, Guangzhou Key Lab Vacuum Coating Technol & New Ene, Guangzhou 510632, Peoples R China
[2] Guangdong Prov Engn Technol Res Ctr Vacuum Coating, Guangzhou 510632, Peoples R China
[3] Guangdong Prov Key Lab Nanophoton Manipulat, Guangzhou 510632, Peoples R China
[4] Jinan Univ, Dept Biomed Engn, Guangzhou 510632, Peoples R China
来源：
VACUUM | 2024年 / 230卷
关键词：
Thermoelectric materials; Films; Electrical properties; THIN-FILMS; BI2TE3; FILMS; CU; POWER; PB;
D O I：
10.1016/j.vacuum.2024.113673
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Motivated by previous investigations on Ag-doped Bi0.5Sb1.5Te3 films deposited on various kinds of substrates, we introduced the Ag doping of moderate content into flexible Bi0.5Sb1.5Te3 films through magnetron co-sputtering. The Ag doping level was found to have significant influence on the film microstructure and orientation. The remarkedly increased carrier concentration suppresses the bipolar conduction, contributing to superior thermoelectric performance in a wide temperature range from 300 K to 580 K. As a result, the 3.5 % Ag-doped Bi0.5Sb1.5Te3 film reveals the highest PF value of 1373 mu Wm(-1) K-2 at 480 K, as well as the best average PF of 1290 mu Wm(-1) K-2 within 300-580 K, which are competitive among the flexible BiSbTe-based thin films.
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页数：7
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