Impact of combined electric and magnetic fields on the physical properties of GaAs variant quantum ring quarter cross-section in presence of an off-center shallow donor impurity

In this study, we explored the complex effects of electric fields in three unique directions and axial magnetic field on a GaAs-Variant Quantum Ring Quarter Cross-Section (VQRQCS), particularly when there is an offcenter shallow donor impurity. The investigation explores the impact of these fields on various physical attributes, including electronic energy, binding energy, magnetic shift, Stark shift, average electron impurity distance, and diamagnetic susceptibility. Using effective mass approximation and three-dimensional finite difference methods we solved the Schrodinger equation. Our result shows that the geometric radius of the VQRQCS has an essential impact on electronic energy. Notably, as the radius increases, the electronic energy decreases, regardless of the presence of fields. In particular, we found that magnetic fields amplify the electronic energy of the ground state. The angle of curvature of the nanostructure and the direction of the electric field also play an important role. Additionally, the electron-impurity binding energy decreases with the growth of the nanostructure, with external fields intensifying this effect. The average distance between the electron and the impurity, analyzed in the context of simultaneously applied fields, provides insight into the Coulomb interaction. Diamagnetic susceptibility, measuring the response of a material to an external magnetic field, is studied, indicating opposition to the external field. In summary, this research highlights the nuanced interactions between electric and magnetic fields that determine the properties of a GaAs quantum ring, providing critical insights for quantum ring-based technological advancements.