Ferromagnetic manganese silicide nanoparticles formed by ion implantation in silicon

被引:0
作者
Ohsugi, R. [1 ]
Kawano, M. [1 ]
Wakabayashi, Y. K. [1 ]
Krockenberger, Y. [1 ]
Sumikura, H. [1 ]
Noborisaka, J. [1 ]
Nishiguchi, K. [1 ]
机构
[1] NTT Corp, NTT Basic Res Labs, Tokyo, Japan
来源
2024 IEEE SILICON NANOELECTRONICS WORKSHOP, SNW 2024 | 2024年
关键词
ion-implantation; silicide; magnetism;
D O I
10.1109/SNW63608.2024.10639207
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Manganese silicide nanoparticles (NPs) embedded in silicon were fabricated by an ion implantation method with various manganese ion acceleration energies (E-acc). The NPs were single crystalline with a tetragonal structure and exhibited ferromagnetic properties below the blocking temperature (T-B), at which the magnetization of NPs starts to fall into a metastable state and becomes fixed. T-B increased as E-acc increased. On the basis of Neel's relaxation theory, we revealed that this dependence originates from the influence of E-acc on the particle sizes.
引用
收藏
页码:73 / 74
页数:2
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