A new look at an explanation of band gap of PECVD grown a-Si:H thin films using absorption spectra, spectroscopic ellipsometry, Raman, and FTIR spectrosopy

Amorphous silicon is seen to be among the most promising materials for solar cell applications because of its higher temperature coefficient of resistance, adjustable forbidden-band gap, enhanced optical absorption, and capacity to reduce solar module costs. Changes in deposition rate, absorption coefficient and optical band gap of a-Si:H films with varying silane flow rate show that SiH4 molecules density influence the plasma growth process. Silane flow rate affects the percentage of silicon atoms during processing. The deposition rate of a-Si: H films increased from 14.36 nm/min to 15.97 nm/min by increasing silane flow rate from 25 sccm to 45 sccm. Broadening of optical band is observed. Films deposited at 35 sccm of silane flow rate shows the higher absorption coefficient. All films are characterized by FTIR, Raman spectroscopy, spectroscopic ellipsometry and optical absorption to understand the changes in band gap. The band gap Eg of all films is correlated with microstructure factor, Q factor, bond angle deviation Delta theta and width of Si-H2 mode to analyse the effect of defects, disorders and microvoids.