Improving the ferroelectric properties of Lu doped Hf0.5Zr0.5O2 thin films by capping a CeO x layer

被引：1

作者：

Xiao, Yongguang ^{[1
]}

Yang, Lisha ^{[1
]}

Jiang, Yong ^{[1
]}

Liu, Siwei ^{[1
]}

Li, Gang ^{[1
]}

Ouyang, Jun ^{[1
,2
]}

Tang, Minghua ^{[1
]}

机构：

[1] Xiangtan Univ, Sch Mat Sci & Engn, Xiangtan 411105, Peoples R China

[2] Qilu Univ Technol, Shandong Acad Sci, Jinan 250353, Shandong, Peoples R China

来源：

NANOTECHNOLOGY | 2024年 / 35卷 / 38期

基金：

中国国家自然科学基金;

关键词：

CSD; ferroelectricity; HZO; wake-up free; TRANSITION; STORAGE; ZRO2;

D O I：

10.1088/1361-6528/ad5bee

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Lu doped Hf0.5Zr0.5O2 (HZO) ferroelectric films were prepared on Pt/TiN/SiO2/Si substrate by chemical solution deposition method, and an interfacial engineering strategy for improving the ferroelectric property was explored by capping the Lu doped HZO films with a cerium oxide layer. Compared with the Lu doped HZO film without the CeOx coating layer, the Lu doped HZO film with the CeOx coating layer has a larger remanent polarization (2P(r) = 34.72 mu C cm(-2)) and presents weaker wake-up behavior, which result from the higher orthogonal phase ratio and the lower oxygen vacancy of the CeOx coated Lu doped HZO film. In addition, the CeOx coating can remarkably improve the fatigue resistance and retention performance of the Lu doped HZO films. It is hoped that the results can provide an effective approach for the realization of high-performance and highly reliable hafnium oxide based ferroelectric thin films.

引用

页数：7

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