High-mobility heterostructures based on InAs and InSb: A Monte Carlo study

被引：30
作者：
Rodilla, H. [1 ]
Gonzalez, T. [1 ]
Pardo, D. [1 ]
Mateos, J. [1 ]
机构：
[1] Univ Salamanca, Dept Fis Aplicada, E-37008 Salamanca, Spain
来源：
JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 11期
关键词：
INAS/ALSB QUANTUM-WELLS; LOW-NOISE; COMPOUND SEMICONDUCTORS; TRANSPORT-PROPERTIES; POWER APPLICATIONS; IMPACT IONIZATION; HIGH-SPEED; HEMTS; PERFORMANCE; TRANSISTORS;
D O I：
10.1063/1.3132863
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this work, by means of Monte Carlo simulations, two different narrow band gap semiconductors, InAs and InSb, and their associated heterostructures, AlSb/InAs and AlInSb/InSb, have been studied. The parameters for the bulk simulations have been optimized in order to correctly reproduce the experimental mobility values. For the correct simulation of the heterostructures, roughness scattering has been included in the model, and its strength has been adjusted to achieve a good agreement with the experimentally measured mobility. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3132863]
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页数：6
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