Robust silicon/carbon composite anode materials with high tap density and excellent cycling performance for lithium-ion batteries

被引:5
|
作者
Xu, Xintong [1 ]
Mu, Xiao [2 ]
Huang, Tao [2 ]
Yu, Aishui [1 ,2 ]
机构
[1] Fudan Univ, Inst New Energy, Shanghai Key Lab Mol Catalysis & Innovat Mat, Dept Chem,Collaborat Innovat Ctr Chem Energy Mat, Shanghai 200438, Peoples R China
[2] Fudan Univ, Lab Adv Mat, Shanghai 200438, Peoples R China
关键词
Lithium -ion batteries; Silicon carbon anode; High tap density; Low volume expansion; Long cycle performance; X-RAY-DIFFRACTION; AMORPHOUS-SILICON; LITHIATION; LI; NANOPARTICLE; METHANE; CARBON; ELECTRODES; CAPACITY; VOLTAGE;
D O I
10.1016/j.jpowsour.2024.234992
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Achieving high density while ensuring structural stability and low volume expansion during cycling remains challenging for Si-based anode materials in lithium-ion batteries (LIBs). Herein, we introduce a novel approach to address this issue by developing high tap-density carbon-coated sub-nano-Si-embedded activated carbon (ACSC) anode materials. The resulting ACSC exhibits an ultra-high true density exceeding 0.99 g cm-3 and a Si content of 48 % (abbreviated as ACS0.48C), leading to an impressive volumetric capacity of 2182 mA h cm- 3. Despite the high tap density and Si content of ACS0.48C, the ACS0.48C/artificial graphite (ACS0.48C/AG) mixture demonstrates a remarkable capacity retention rate of 97.9 % after 200 cycles at 0.5 C, with a modest volume expansion rate of 7.3 % after 50 cycles. The outstanding electrochemical performance can be attributed to the structural stability of ACS0.48C throughout cycling. The AC scaffold provides a robust mechanical framework to prevent volume expansion and agglomeration of sub-nano-sized Si particles. Furthermore, the homogeneous mixing of amorphous Si and carbon at the atomic level ensures isotropic expansion, thereby enhancing structural stability. The unique structure of ACS0.48C, combining high tap density and superior cycling performance, offers a solution to the low tap density issue in nanostructures and introduces innovative concepts for the morphology and structural design of Si/C secondary particles.
引用
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页数:10
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