Layer and orientation dependent optical anisotropic response of CVD grown MoS2 films under resonance/non-resonance excitation

被引:0
|
作者
Singh, Ankita [1 ]
Mishra, Ashish Kumar [1 ]
机构
[1] Banaras Hindu Univ, Indian Inst Technol, Sch Mat Sci & Technol, Varanasi 221005, India
来源
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2024年 / 309卷
关键词
Transition metal dichalcogenides; Group theory; Quantum Espresso; Phonons; Optical anisotropy; RAMAN-SPECTROSCOPY; POLARIZATION; MONOLAYER; SCATTERING; NANOSHEETS; BULK;
D O I
10.1016/j.mseb.2024.117627
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The MoS2 has gained worldwide research interest owing to their strong light-matter interaction and their rich physics that offers unprecedented potential for next-generation nanotechnology applications. Their electrical and thermal properties are mainly governed by interaction mechanism of electrons with phonons and thus, studying the polarization-dependent anisotropic phonon response of MoS2 are of great interest. Here, we discuss the evolution of phonon modes with increasing layer number and their respective phonon DOS. Further, the optical anisotropic response is experimentally investigated using ARPRS study for CVD-grown triangular MoS2 with different layer numbers and different excitations, and has been discussed based on theory that includes deformation potential and Fro<spacing diaeresis>hlich interaction. Further, the ARPRS study of horizontally and vertically oriented MoS2 films are studied. The different anisotropic response of vertically oriented film is observed due to symmetry breaking of the vertical nanosheets, thus providing wide-field applications in MoS2-based photonic and optoelectronic devices.
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页数:11
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