Temperature Compensation Method Based on Bilinear Interpolation for Downhole High-Temperature Pressure Sensors

被引:1
作者
Shu, Yizhan [1 ]
Hua, Chenquan [1 ]
Zhao, Zerun [1 ]
Wang, Pengcheng [1 ]
Zhang, Haocheng [1 ]
Yu, Wenxin [1 ]
Yu, Haobo [1 ]
机构
[1] China Univ Petr East China, Coll Control Sci & Engn, Qingdao 266580, Peoples R China
关键词
high temperature; temperature compensation; piezoresistive pressure sensor; bilinear interpolation; least square;
D O I
10.3390/s24165123
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Due to their high accuracy, excellent stability, minor size, and low cost, silicon piezoresistive pressure sensors are used to monitor downhole pressure under high-temperature, high-pressure conditions. However, due to silicon's temperature sensitivity, high and very varied downhole temperatures cause a significant bias in pressure measurement by the pressure sensor. The temperature coefficients differ from manufacturer to manufacturer and even vary from batch to batch within the same manufacturer. To ensure high accuracy and long-term stability for downhole pressure monitoring at high temperatures, this study proposes a temperature compensation method based on bilinear interpolation for piezoresistive pressure sensors under downhole high-temperature and high-pressure environments. A number of calibrations were performed with high-temperature co-calibration equipment to obtain the individual temperature characteristics of each sensor. Through the calibration, it was found that the output of the tested pressure measurement system is positively linear with pressure at the same temperatures and nearly negatively linear with temperature at the same pressures, which serves as the bias correction for the subsequent bilinear interpolation temperature compensation method. Based on this result, after least squares fitting and interpolating, a bilinear interpolation approach was introduced to compensate for temperature-induced pressure bias, which is easier to implement in a microcontroller (MCU). The test results show that the proposed method significantly improves the overall measurement accuracy of the tested sensor from 21.2% F.S. to 0.1% F.S. In addition, it reduces the MCU computational complexity of the compensation model, meeting the high accuracy demand for downhole pressure monitoring at high temperatures and pressures.
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页数:11
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