Enhanced thermoelectric performance of AgCuTe-doped polycrystalline SnSe by lattice plainification

被引:1
|
作者
Wang, Yajing [1 ]
Wang, Chao [1 ]
Wang, Xinxin [1 ]
Cui, Shengqiang [1 ]
Hao, Min [1 ]
Wang, Chunhui [1 ]
Huang, Xudong [1 ]
Yang, Gui [2 ]
机构
[1] Henan Univ, Inst Computat Mat Sci, Sch Phys & Elect, Kaifeng 475004, Peoples R China
[2] Chuzhou Univ, Sch Mech & Elect Engn, Chuzhou 239000, Peoples R China
基金
中国国家自然科学基金;
关键词
thermoelectric material; SnSe; AgCuTe; lattice plainification; THERMAL-CONDUCTIVITY; PHONON TRANSPORTS; EFFICIENCY; CONVERGENCE; FIGURE; MERIT; PBTE;
D O I
10.1088/1361-6463/ad76be
中图分类号
O59 [应用物理学];
学科分类号
摘要
Polycrystalline SnSe, renowned for its environmental sustainability, holds promise as a significant thermoelectric material, attracting considerable research attention. This study focuses on the thermoelectric properties of p-type polycrystalline SnSe doped with silver copper telluride (AgCuTe). Our experimental results conclusively show that the decomposition products of AgCuTe not only fill Sn vacancies but also act as acceptors, thereby introducing additional hole carriers. This leads to a notable improvement in both carrier mobility and concentration. Importantly, the thermal conductivity of the doped samples remains largely unchanged, as the lattice flattening strategy significantly boosts electrical performance without affecting lattice thermal conductivity. Ultimately, the doped sample Sn0.97Se-0.5%AgCuTe resulted in a power factor of 6.2 mW mK-1 and a peak ZT value of 1.4 at 798 K, representing a 109% improvement in ZT value. All samples exhibits superior stability and reproducibility, emphasizing its reliability for practical applications.
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页数:8
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