Sub-terahertz Si CMOS Based Emitters and Detectors

被引：0

作者：

But, Dmytro B. ^{[1
]}

Kolacinski, Cezary ^{[1
]}

Chemyadiev, Alexander V. ^{[1
]}

Ikamas, Kystutis ^{[2
]}

Knap, Wojciech ^{[1
]}

Lisauskas, Alvydas ^{[2
]}

机构：

[1] PAS, Inst High Pressure Phys, CENTERA Labs, Warsaw, Poland

[2] Vilnius Univ, Inst Appl Electrodynam & Telecommun, Vilnius, Lithuania

来源：

2024 31ST INTERNATIONAL CONFERENCE ON MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEM, MIXDES 2024 | 2024年

关键词：

TeraFET; CMOS; terahertz; VCO; THz detectors; THZ; OSCILLATORS; DIODES; ARRAY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents compact CMOS-based electronic sources and detectors designed for the sub-terahertz frequency range. We illustrate that achievable noise-equivalent power levels, in the range of a few tens of pW/root IHz, along with emitted power reaching up to 100 mu W, enable the construction of effective quasi-optical emitter-detector pairs operating within the 200 - 266 GHz range. Additionally, the input power-related signal-to-noise ratio can reach up to 70 dB for a one Hz equivalent noise bandwidth. We showcase the versatility of these compact devices across various applications, including imaging, spectroscopy, and wireless communication links.

引用

页码：148 / 153

页数：6

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