Sub-terahertz Si CMOS Based Emitters and Detectors

被引：0
|
作者：
But, Dmytro B. [1 ]
Kolacinski, Cezary [1 ]
Chemyadiev, Alexander V. [1 ]
Ikamas, Kystutis [2 ]
Knap, Wojciech [1 ]
Lisauskas, Alvydas [2 ]
机构：
[1] PAS, Inst High Pressure Phys, CENTERA Labs, Warsaw, Poland
[2] Vilnius Univ, Inst Appl Electrodynam & Telecommun, Vilnius, Lithuania
来源：
2024 31ST INTERNATIONAL CONFERENCE ON MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEM, MIXDES 2024 | 2024年
关键词：
TeraFET; CMOS; terahertz; VCO; THz detectors; THZ; OSCILLATORS; DIODES; ARRAY;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents compact CMOS-based electronic sources and detectors designed for the sub-terahertz frequency range. We illustrate that achievable noise-equivalent power levels, in the range of a few tens of pW/root IHz, along with emitted power reaching up to 100 mu W, enable the construction of effective quasi-optical emitter-detector pairs operating within the 200 - 266 GHz range. Additionally, the input power-related signal-to-noise ratio can reach up to 70 dB for a one Hz equivalent noise bandwidth. We showcase the versatility of these compact devices across various applications, including imaging, spectroscopy, and wireless communication links.
引用
收藏
页码：148 / 153
页数：6
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