Band alignment of one-dimensional transition-metal dichalcogenide heterotubes

被引:0
|
作者
Ge, Mei [1 ]
Zeng, Fanmin [2 ]
Wang, Zixuan [2 ]
Ma, Jiang-Jiang [2 ]
Zhang, Junfeng [1 ]
机构
[1] Hainan Normal Univ, Coll Phys & Elect Engn, Haikou 571158, Peoples R China
[2] Shanxi Normal Univ, Sch Phys & Informat Engn, Taiyuan 030031, Peoples R China
基金
中国国家自然科学基金;
关键词
ULTRAFAST CHARGE-TRANSFER; BORON-NITRIDE NANOTUBES; WS2; NANOTUBES; WAALS; MOS2; HETEROSTRUCTURES; GRAPHENE;
D O I
10.1039/d4nr03384a
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
One-dimensional (1D) van der Waals (vdW) heterotubes, where different kinds of 1D nanotubes coaxially nest inside each other, offer a flexible platform for promising applications. The various properties of these 1D heterotubes depend on their diameter. Here, we present a systematic theoretical investigation into the structural and electronic properties of two kinds of 1D transition-metal dichalcogenide (TMD) heterotubes. We demonstrate that the thermodynamic stability of 1D heterotubes is determined by their interlayer distance. Additionally, we establish that the band alignment transition changes from type I to type II in 1D TMD heterotubes. We identify two distinct transition mechanisms, originating from the exchange of either the valence band maximum or the conduction band minimum. According to an electrostatic model, the band alignment transition is attributed to the interlayer electric field effect, which depends on the heterotube diameter. The findings in this work provide valuable physical insights into the band alignment transition in 1D heterotubes and are instrumental for their potential applications in nanotechnology. One-dimensional (1D) van der Waals (vdW) heterotubes, where different kinds of 1D nanotubes coaxially nest inside each other, offer a flexible platform for promising applications.
引用
收藏
页码:17495 / 17504
页数:10
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