Process-chain approach to the Bose-Hubbard model: Ground-state properties and phase diagram

被引:51
作者
Teichmann, Niklas [1 ]
Hinrichs, Dennis [1 ]
Holthaus, Martin [1 ]
Eckardt, Andre [2 ]
机构
[1] Carl VonOssietzky Univ Oldenburg, Inst Phys, D-26111 Oldenburg, Germany
[2] ICFO, E-08860 Barcelona, Spain
来源
PHYSICAL REVIEW B | 2009年 / 79卷 / 22期
关键词
ground states; Hubbard model; localised states; perturbation theory; phase diagrams; tunnelling; EXPANSIONS; TRANSITION; SUPERFLUID; INSULATOR; ATOMS;
D O I
10.1103/PhysRevB.79.224515
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We carry out a perturbative analysis, of high order in the tunneling parameter, of the ground state of the homogeneous Bose-Hubbard model in the Mott insulator phase. This is made possible by a diagrammatic process-chain approach, derived from Kato's representation of the many-body perturbation series, which can be implemented numerically in a straightforward manner. We compute ground-state energies, atom-atom correlation functions, density-density correlations, and occupation number fluctuations, for one-, two-, and three-dimensional lattices with arbitrary integer filling. A phenomenological scaling behavior is found which renders the data almost independent of the filling factor. In addition, the process-chain approach is employed for calculating the boundary between the Mott insulator phase and the superfluid phase with high accuracy. We also consider systems with dimensionalities d>3, thus monitoring the approach to the mean-field limit. The versatility of the method suggests further applications to other systems which are less well understood.
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页数:14
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