Electrophysical Properties of Cd0.96Mn0.04Te0.96Se0.04 Surface-Barrier Diodes

被引：0

作者：

Sklyarchuk, V. ^{[1
]}

Kopach, O. ^{[1
]}

Fochuk, P. ^{[1
]}

Bolotnikov, A. E. ^{[2
]}

James, R. B. ^{[3
]}

机构：

[1] Chernivtsi Natl Univ, Dept Chem, UA-58012 Chernovtsy, Ukraine

[2] Brookhaven Natl Lab, Upton, NY 11973 USA

[3] Savannah River Natl Lab, Aiken, SC 29808 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2024年 / 71卷 / 09期

关键词：

Crystals; Resistance; Current measurement; Surface treatment; Semiconductor device measurement; Conductivity; Temperature measurement; Cd0.96Mn0.04Te0.96Se0.04; generation-recombination currents; ohmic contact; rectifying contact; single crystals; GAMMA-RAY; CYCLOTRON-RESONANCE; OPTICAL-DETECTION; X-RAY; CDTE; CRYSTALS;

D O I：

10.1109/TNS.2024.3436525

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Diode structures, obtained by vacuum deposition of Al onto the surface of a p-Cd0.96Mn0.04Te0.96Se0.04 single crystals, have been manufactured and studied. Applying the Sah-Noyce-Shockley carrier generation-recombination model, a quantitative description of the electrical characteristics of diodes has been achieved. The resistivity of p-Cd0.96Mn0.04Te0.96Se0.04 crystals was equal to rho approximate to 400 Omega center dot cm and was determined from the I-V characteristics of the structure with two ohmic contacts, which were obtained by chemical deposition of gold. The activation energy of the dark temperature dependence of resistivity rho = rho (T) was equal to Delta E approximate to 0.24 eV. The forbidden gap of p-Cd(0.96)Mn(0.04)Te(0.96)Se(0.04 )crystals, found from the optical absorption spectra, was equal to E-g = 1.495 eV.

引用

页码：2189 / 2193

页数：5

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