Linear photogalvanic effect in two-dimensional PSi photodetector by vacancy- and substitution-doping

被引:0
|
作者
Fu, Xi [1 ,2 ]
Lin, Jian [2 ]
Liang, Guangyao [2 ]
Liao, Wenhu [2 ]
Li, Xiaowu [1 ]
Wu, Qinghua [1 ]
Zeng, Hui [1 ]
机构
[1] Hunan Universtiy Sci & Engn, Coll Sci, Yongzhou 425199, Peoples R China
[2] Jishou Univ, Coll Phys & Mech & Electr Engn, Jishou 416000, Peoples R China
基金
中国国家自然科学基金; 湖南省自然科学基金;
关键词
First-principles calculation; Photogalvanic effect; PSi monolayer; Doping; SIP; POLARIZATION;
D O I
10.1016/j.cplett.2024.141332
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Using particle swarm optimization methodology for crystal structure prediction and first-principles density functional theory, a graphene-like honeycombed PSi monolayer has been found by our group with its thermodynamical, dynamical and mechanical stability having been listed. To extend the application of the PSi mono- layer, the armchair and zigzag photodetector devices based on the photogalvanic effect have been built. When the linearly polarized light illuminates on the armchair or zigzag photodetector, due to the C1 symmetry of PSi monolayer the PSi photodetector can directly produce high photocurrents. In addition, the produced photo- currents show the relations cos(2B) and sin(2B) on the polarization angle theta for the armchair and zigzag photo- detector, respectively. Moreover, the value of photon energy can effectively influence the distribution of generated photocurrents, namely the relations on the angle B. Especially, the vacancy- and substitution-doping in the PSi photodetector can enhance the generated photocurrents. These results demonstrated great potential applications of the PSi monolayer on the low energy-consumption optoelectronics devices.
引用
收藏
页数:5
相关论文
共 16 条
  • [1] Photogalvanic effect in two-dimensional BGe photodetector by vacancyand substitution-doping
    Fu, Xi
    Liang, Guangyao
    Lin, Jian
    Liao, Wenhu
    Gao, Haixia
    Li, Liming
    PHYSICA B-CONDENSED MATTER, 2024, 686
  • [2] Study on the mechanism of enhancing photocurrent in TiS2 photodetector by vacancy- and substitution-doping
    Gu, Ziqiang
    Xie, Xinshuo
    Hao, Bin
    Zhu, Lin
    APPLIED SURFACE SCIENCE, 2025, 685
  • [3] Enhanced photogalvanic effect in the B3C2P3 photodetector by vacancy, substitution-doping and interstitial atom
    Fu, Xi
    Lin, Jian
    Cheng, Xiaoli
    Liao, Wenhu
    Guo, Jiyuan
    Li, Xiaowu
    Li, Liming
    MATERIALS TODAY COMMUNICATIONS, 2023, 35
  • [4] Robust photogalvanic effect, full spin polarization and pure spin current in the BiC photodetector by vacancy and substitution-doping
    Fu, Xi
    Lin, Jian
    He, Chaozheng
    Liao, Wenhu
    Guo, Jiyuan
    Li, Xiaowu
    Gao, Haixia
    NANOTECHNOLOGY, 2024, 35 (06)
  • [5] Linear and elliptical photogalvanic effects in two-dimensional penta-BP5 photodetector
    Fu, Xi
    Liang, Guangyao
    Lin, Jian
    Liao, Wenhu
    Li, Liming
    Li, Xiaowu
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2024, 130 (07):
  • [6] Effect of vacancies on photogalvanic effect in two-dimensional WSe2 photodetector
    Sun, Xiaoxin
    Yin, Shaoqian
    Wei, Dong
    Li, Yi
    Ma, Yaqiang
    Dai, Xianqi
    APPLIED SURFACE SCIENCE, 2023, 610
  • [7] Linear Photogalvanic Effect in Two-Dimensional WTe2 Nanoribbons Under Tensile Strain
    Cao, Pei-Xu
    Ma, Yong-Hong
    Chao, Luo-Meng
    Liu, Jia
    JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2024, 19 (11) : 1125 - 1132
  • [8] Multifunctional Two-Dimensional VSi2N4/WSi2N4/VSi2N4 Photodetector Driven by the Photogalvanic Effect
    Shu, Li
    Qian, Liyu
    Ye, Xiang
    Xie, Yiqun
    PHYSICAL REVIEW APPLIED, 2022, 17 (05)
  • [9] Effect of Fe doping on electronic structure and optical properties of two-dimensional CuI
    Zhang, Zhuli
    Zhang, Fan
    Wang, Kailei
    Li, Chao
    Wang, Jintao
    ACTA PHYSICA SINICA, 2025, 74 (02)
  • [10] Effect of Te doping on oxidation resistance and electronic structure of two-dimensional InSe
    Miao Rui-Xia
    Xie Miao-Chun
    Cheng Kai
    Li Tian-Tian
    Yang Xiao-Feng
    Wang Ye-Fei
    Zhang De-Dong
    ACTA PHYSICA SINICA, 2023, 72 (12)