Enhanced resistance property between ALD-Ru and W by controlling oxygen behavior with post Ru deposition annealing

被引：0

作者：

Kim, Sung Jun ^{[1
]}

Kim, Seon Yong ^{[2
]}

Park, Jun Hyeong ^{[3
]}

Park, In-Sung ^{[4
]}

Park, Young Wook ^{[3
]}

Ahn, Jinho ^{[1
,3
]}

机构：

[1] Hanyang Univ, Div Nanoscale Semicond Engn, Seoul 04763, South Korea

[2] Samsung Elect Co Ltd, Suwon 16677, South Korea

[3] Hanyang Univ, Div Mat Sci & Engn, Seoul 04763, South Korea

[4] Hanyang Univ, Inst Nano Sci & Technol, Seoul 04763, South Korea

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2025年 / 185卷

基金：

新加坡国家研究基金会;

关键词：

Ruthenium; Post-deposition annealing; Oxygen scavenging; Contact resistance; ATOMIC LAYER DEPOSITION; RUTHENIUM; TEMPERATURE; RU(DMBD)(CO)(3); DIFFUSION;

D O I：

10.1016/j.mssp.2024.108933

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A method to eliminate an oxide layer formed on landing pad during the atomic layer deposition (ALD) of Ruthenium (Ru) was investigated with post-deposition annealing (PDA). The study demonstrates that PDA at 600 C-degrees in a H-2/Ar forming gas atmosphere effectively removes the oxide layer at the Ru and tungsten (W) interface. The behavior of interfacial oxygen with increasing PDA temperature was confirmed by X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). The resulting improvement in contact resistance was confirmed by measuring the resistance of string pattern before and after PDA. This work offers a potential solution for integrating Ru in DRAM capacitors by addressing the challenge posed by Ru ALD.

引用

页数：8