Synthesis and functional properties of (Al0.2Co0.2Fe0.2Ni0.2Ti0.2)3O4 high entropy spinel oxide

被引:0
作者
Mishra, Rajesh K. [1 ]
Minussi, F. B. [1 ]
Kumari, Priyanka [2 ]
Shahi, Rohit R. [2 ]
Araujo, E. B. [1 ]
机构
[1] Sao Paulo State Univ, Dept Phys & Chem, Inst Chem, BR-15385000 Sao Paulo, SP, Brazil
[2] Cent Univ South Bihar Gaya, Dept Phys, FMRL, Gaya 824236, India
关键词
High entropy oxide; Spinel structure; Raman spectroscopy; RS behavior; Dielectric and magnetic behavior; DIELECTRIC-PROPERTIES; MAGNETIC-PROPERTIES; PHASE-FORMATION; SUBSTITUTION; BEHAVIOR; CO; NANOPARTICLES; CONSTANT; DY3+; NI;
D O I
10.1016/j.jpcs.2024.112249
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The present study reports the synthesis of a novel (Al0.2Co0.2Fe0.2Ni0.2Ti0.2)(3)O-4 high entropy oxide (HEO) through the solid-state reaction method and its structural, dielectric, electric, and magnetic properties. For the first time, a cumulative study of dielectric, electric, and magnetic properties of the spinel HEO has been investigated in detail. The obtained HEO has a single-phase spinel structure with Fd-3m space group, confirmed through X-ray diffraction and Raman spectroscopy techniques. Moreover, Raman spectroscopic analysis also confirms that the synthesized spinel HEO is an inverse spinel. The dielectric and magnetic characterizations reveal a better dielectric permittivity of epsilon' = 35 at 1 MHz and high saturation magnetization Ms = 8.58 emu/g with low magnetic coercivity. The leakage current characteristics studied in terms of J-E curves indicate an ohmic conduction mechanism at a low electric field. Moreover, the high dielectric permittivity with resistive switching behavior (observed in the J-E curve) indicates its potential application in resistive switching memory devices, which have better functionality and enhanced scalability.
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页数:9
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