Abnormal photoluminescence properties of InAs/InAsSb in-plane ultrahigh-density quantum dots

被引：0

作者：

Oon, Sim Jui ^{[1
]}

Ohyama, Takumi ^{[1
]}

Miyashita, Naoya ^{[1
]}

Yamaguchi, Koichi ^{[1
]}

机构：

[1] Univ Electrocommun, Dept Engn Sci, 1-5-1 Chofugaoka, Chofu, Tokyo 1828585, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2024年 / 63卷 / 08期

关键词：

quantum dot; InAs/InAsSb; photoluminescence; strong coupling; molecular beam epitaxy; DEPENDENCE; LAYERS;

D O I：

10.35848/1347-4065/ad66a0

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InAs/InAsSb ultrahigh-density quantum dots (UHD QDs) with a density of 1x1012cm-2 were fabricated using MBE, and their photoluminescence (PL) properties were characterized. Through temperature dependences of PL energy, intensity and decay time of UHD QDs, it was found that in-plane strong coupling between adjacent QDs of excited and ground states due to homogeneous broadening of QD levels progressed above 60 K and above 100 K, respectively. The findings regarding the strong coupling at ground states were consistent with the temperature dependence of PL minimum energy outlined in appendix. In addition, abnormal phenomenon in PL full width at half maximum was attributed to the in-plane miniband formation resulting from strong coupling.

引用

页数：8

共 35 条

[1] Semiconductor clusters, nanocrystals, and quantum dots [J].

Alivisatos, AP .

SCIENCE, 1996, 271 (5251) :933-937

[2]

Asahi H., 2019, Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics, pp. 57

[3] Temperature dependence of the exciton homogeneous linewidth in In0.60Ga0.40As/GaAs self-assembled quantum dots -: art. no. 041308 [J].

Bayer, M ;

Forchel, A .

PHYSICAL REVIEW B, 2002, 65 (04) :1-4

[4] Coupling and entangling of quantum states in quantum dot molecules [J].

Bayer, M ;

Hawrylak, P ;

Hinzer, K ;

Fafard, S ;

Korkusinski, M ;

Wasilewski, ZR ;

Stern, O ;

Forchel, A .

SCIENCE, 2001, 291 (5503) :451-453

[5] Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering [J].

Colocci, M ;

Vinattieri, A ;

Lippi, L ;

Bogani, F ;

Rosa-Clot, M ;

Taddei, S ;

Bosacchi, A ;

Franchi, S ;

Frigeri, P .

APPLIED PHYSICS LETTERS, 1999, 74 (04) :564-566

[6] Acoustic phonon sidebands in the emission line of single InAs/GaAs quantum dots -: art. no. 233301 [J].

Favero, I ;

Cassabois, G ;

Ferreira, R ;

Darson, D ;

Voisin, C ;

Tignon, J ;

Delalande, C ;

Bastard, G ;

Roussignol, P ;

Gérard, JM .

PHYSICAL REVIEW B, 2003, 68 (23)

[7] Interdot spacing dependence of electronic structure and properties of multistacked InGaAs quantum dots fabricated without strain compensation technique [J].

Goshima, Keishiro ;

Tsuda, Norio ;

Inukai, Keisuke ;

Amano, Takeru ;

Sugaya, Takeyoshi .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (06)

[8] Thermally activated inter-dots carriers' transfer in InAs QDs with InGaAs underlying layer: Origin and dependence on the post-growth intermixing [J].

Ilahi, B. ;

Nasr, O. ;

Paquette, B. ;

Alouane, M. H. Hadj ;

Chauvin, N. ;

Salem, B. ;

Sfaxi, L. ;

Bru-Chevalier, C. ;

Morris, D. ;

Ares, R. ;

Aimez, V. ;

Maaref, H. .

JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 656 :132-137

[9] Sb-mediated growth of high-density InAs quantum dots and GaAsSb embedding growth by MBE [J].

Kakuda, N. ;

Yoshida, T. ;

Yamaguchi, K. .

APPLIED SURFACE SCIENCE, 2008, 254 (24) :8050-8053

[10] Efficient acoustic phonon broadening in single self-assembled InAs/GaAs quantum dots -: art. no. 033313 [J].

Kammerer, C ;

Cassabois, G ;

Voisin, C ;

Delalande, C ;

Roussignol, P ;

Lemaître, A ;

Gérard, JM .

PHYSICAL REVIEW B, 2002, 65 (03) :333131-333134

← 1 2 3 4 →