Enhanced Performance of Perovskite Solar Cells with Tungsten-Doped SnO2 as an Electron Transport Material

被引:1
作者
Muzakkar, Muhammad Zakir [1 ]
Busri, Nur Aisyah [1 ]
Umar, Akrajas Ali [2 ,3 ]
Salim, La Ode Agus [4 ]
Maulidiyah, Maulidiyah [1 ]
Nurdin, Muhammad [1 ,2 ]
机构
[1] Univ Halu Oleo, Fac Math & Nat Sci, Dept Chem, Kendari 93232, Southeast Sulaw, Indonesia
[2] Univ Muhammadiyah Kendari, Nickel Res Inst, Kendari 93127, Southeast Sulaw, Indonesia
[3] Univ Kebangsaan Malaysia, Inst Microengn & Nanoelect, Bangi 43600, Selangor, Malaysia
[4] Inst Sains Teknol dan Kesehatan ISTEK Aisyiyah Ken, Fac Sci & Technol, Dept Chem, Kendari 93116, Southeast Sulaw, Indonesia
关键词
PSC; W/SnO2; ETM; Efficiency; Electron transport layer;
D O I
10.1007/s10904-024-03365-0
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
This study focuses on the synthesis and characterization of tungsten (W)-doped SnO2 as an electron transport material (ETM) for perovskite solar cells (PSC). The aim is to enhance the performance of PSCs by improving the properties of the ETM. The W-doped SnO2 was synthesized by dissolving SnO2 and W in deionized water, followed by sonication. The doping was achieved using a spin-coating technique, with subsequent annealing at 350 degrees C for 20 min. X-ray diffraction analysis revealed characteristic peaks of SnO2 at 2 theta values of 26.53 degrees, 33.82 degrees, 37.67 degrees, 51.59 degrees, and 54.69 degrees, alongside an additional peak at 2 theta = 14.46 degrees, indicative of successful tungsten incorporation. Field emission scanning electron microscopy confirmed the formation of a uniform electron transport layer on fluorine-doped tin oxide glass, with a thickness of approximately 44.66 nm. UV-Vis spectroscopy measurements showed that the band gap of W-doped SnO2 was 4.38 eV. Performance evaluation revealed that the W-doped SnO2 ETL outperformed the undoped SnO2 ETL in PSC applications, as evidenced by significant improvements in open-circuit voltage (Voc), fill factor (FF), short-circuit current density (Jsc), and power conversion efficiency. Incorporating W into the SnO2 ETL led to a marked increase in overall device efficiency, corroborated by a hysteresis curve demonstrating reduced J-V loss. The optimized W-doped SnO2 ETL-based PSC achieved a notable power conversion efficiency of up to 8.02%, with Voc, Jsc, and FF reaching 0.89 V, 23.65 mA/cm(2), and 0.45, respectively. This study highlights the significant potential of W-doped SnO2 as a promising ETM for enhancing the efficiency of PSCs.
引用
收藏
页码:1475 / 1483
页数:9
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