First-principles study on the optical and electronic properties of YK defects in KH2PO4 crystals

被引:0
作者
Lu, Xu [1 ]
Hong, Wei [2 ]
Liu, Tingyu [1 ]
Li, Huifang [1 ]
Wang, Jianghai [1 ]
机构
[1] Univ Shanghai Sci & Technol, Coll Sci, 516 Jungong Rd, Shanghai 200093, Peoples R China
[2] CAEP, Res Ctr Laser Fus, Sci & Technol Plasma Phys Lab, Mianyang 621900, Peoples R China
来源
MATERIALS TODAY COMMUNICATIONS | 2024年 / 41卷
关键词
KH2PO4; crystal; Density functional theory; Finite-size correction; Absorption band; Defect formation energies; Laser-induced damage threshold; POTASSIUM DIHYDROGEN PHOSPHATE; IGNITION; KDP;
D O I
10.1016/j.mtcomm.2024.110316
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The defect formation energy, electronic structures and optical properties of paraelectric phase (PE-KDP) and ferroelectric phase (FE-KDP) crystals with Y substitute K(Y-K) defects have been investigated using density function theory. The doping of Y atoms leads to changes in bond lengths around the defects for the different charged defect. The most pronounced changes occur in the O-H and O-Y bond lengths, which disrupts the geometrical symmetry of the original crystals. According to the defect formation energy, defects are likely to be most stable in the +2 charged state. The conduction band shifts down and band gap reduces caused by Y-K defect. New defect states in the bandgap mainly arise from the interaction between 2p orbitals of O and 4d orbitals of Y. The calculated absorption peaks are at 1.715(723 nm), 6.907 eV(180 nm), 3.178(390 nm), and 6.299 eV(197 nm) for PE-KDP. The 197 nm absorption band is close to the absorption of the experimental samples at 190-250 nm. The absorption bands of FE-KDP presents in the UV and visible range.
引用
收藏
页数:10
相关论文
共 48 条
  • [1] Electronic structure and optical properties of CdMoO4 and CdWO4
    Abraham, Y
    Holzwarth, NAW
    Williams, RT
    [J]. PHYSICAL REVIEW B, 2000, 62 (03): : 1733 - 1741
  • [2] Optoelectronic properties of KDP by first principle calculations
    Aliabad, Hossein Asghar Rahnamaye
    Fathabadi, Marjan
    Ahmad, Iftikhar
    [J]. INTERNATIONAL JOURNAL OF QUANTUM CHEMISTRY, 2013, 113 (06) : 865 - 872
  • [3] First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO
    Alkauskas, Audrius
    Lyons, John L.
    Steiauf, Daniel
    Van de Walle, Chris G.
    [J]. PHYSICAL REVIEW LETTERS, 2012, 109 (26)
  • [4] Defect levels through hybrid density functionals: Insights and applications
    Alkauskas, Audrius
    Broqvist, Peter
    Pasquarello, Alfredo
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2011, 248 (04): : 775 - 789
  • [5] Defect energy levels in density functional calculations: Alignment and band gap problem
    Alkauskas, Audrius
    Broqvist, Peter
    Pasquarello, Alfredo
    [J]. PHYSICAL REVIEW LETTERS, 2008, 101 (04)
  • [6] BAND THEORY AND MOTT INSULATORS - HUBBARD-U INSTEAD OF STONER-I
    ANISIMOV, VI
    ZAANEN, J
    ANDERSEN, OK
    [J]. PHYSICAL REVIEW B, 1991, 44 (03): : 943 - 954
  • [7] PROJECTOR AUGMENTED-WAVE METHOD
    BLOCHL, PE
    [J]. PHYSICAL REVIEW B, 1994, 50 (24): : 17953 - 17979
  • [8] NIF optical materials and fabrication technologies: An overview
    Campbell, JH
    Hawley-Fedder, RA
    Stolz, CJ
    Menapace, JA
    Borden, MR
    Whitman, PK
    Yu, J
    Runkel, M
    Riley, MO
    Feit, MD
    Hackel, RP
    [J]. OPTICAL ENGINEERING AT THE LAWRENCE LIVERMORE NATIONAL LABORATORY II: THE NATIONAL IGNITION FACILITY, 2004, 5341 : 84 - 101
  • [9] Complex morphology of laser-induced bulk damage in K2H(2-x)DxPO4 crystals
    Carr, C. W.
    Feit, M. D.
    Johnson, M. A.
    Rubenchik, A. M.
    [J]. APPLIED PHYSICS LETTERS, 2006, 89 (13)
  • [10] Correspondence of defect energy levels in hybrid density functional theory and many-body perturbation theory
    Chen, Wei
    Pasquarello, Alfredo
    [J]. PHYSICAL REVIEW B, 2013, 88 (11)