Low energy Xe ion beam engineering in optical, structural and morphological properties of hafnium oxide thin films grown by atomic layer deposition technique

被引：0
作者：
Kumar, Rajesh [1 ,2 ]
Gupta, Deepika [1 ,2 ]
Bansal, Muskaan [1 ,2 ]
Jyoti, Naveen [1 ,2 ]
Deepika, Ashok [1 ,2 ]
Kumar, Ashok [1 ,2 ]
机构：
[1] Guru Gobind Singh Indraprastha Univ, Univ Sch Basic & Appl Sci, New Delhi 110078, India
[2] Univ Delhi, Ramjas Coll, Dept Phys, Univ Enclave, New Delhi 110007, India
来源：
JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY | 2024年
关键词：
HfO2; ALD; UV-VIS; PL; XRD; AFM; HFO2; FILMS; TEMPERATURE; PARAMETERS; COATINGS; SENSOR; GAS;
D O I：
10.1007/s10967-024-09747-5
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
Hafnium oxide (HfO2) exhibit chemical resistivity, thermal stability and mechanical resilience on account of which it is used in numerous applications in integrated and optical circuit technology. In the present work, HfO2 thin films have been grown by atomic layer deposition (ALD) technique on silicon and glass substrate. After growth of the films were irradiated with the Xe ion beam with distinct fluence of 1E15-1E16 ions/cm(2). Optical properties of films were investigated by the UV-VIS and Photoluminescence (PL) spectroscopy. The crystallographic parameters were illustrated by X-ray diffraction (XRD) pattern of pristine and ion beam treated thin films. Morphology of surface has been studied through atomic force microscopy (AFM).
引用
收藏
页数：6
相关论文
共 40 条
[1]   Influence of substrate temperature on atomic layer growth and properties of HfO2 thin films [J].
Aarik, J ;
Aidla, A ;
Kiisler, AA ;
Uustare, T ;
Sammelselg, V .
THIN SOLID FILMS, 1999, 340 (1-2) :110-116
[2]   Effects of physical growth conditions on the structural and optical properties of sputtered grown thin HfO2 films [J].
Aygun, Gulnur ;
Cantas, Ayten ;
Simsek, Yilmaz ;
Turan, Rasit .
THIN SOLID FILMS, 2011, 519 (17) :5820-5825
[3]   Broadband antireflective coatings based on two-dimensional arrays of subwavelength nanopores [J].
Baranov, D. A. ;
Dmitriev, P. A. ;
Mukhin, I. S. ;
Samusev, A. K. ;
Belov, P. A. ;
Simovski, C. R. ;
Shalin, A. S. .
APPLIED PHYSICS LETTERS, 2015, 106 (17)
[4]   Investigation of SiO2/HfO2 gate stacks for application to non-volatile memory devices [J].
Buckley, J ;
De Salvo, B ;
Ghibaudo, G ;
Gely, M ;
Damlencourt, JF ;
Martin, F ;
Nicotra, G ;
Deleonibus, S .
SOLID-STATE ELECTRONICS, 2005, 49 (11) :1833-1840
[5]   Phase transformation and modifications in high-k ZrO2 nanocrystalline thin films by low energy Kr5+ ion beam irradiation [J].
Chauhan, Vishnu ;
Kumar, Rajesh .
MATERIALS CHEMISTRY AND PHYSICS, 2020, 240
[6]   Annealing temperature dependence on the structural and optical properties of sputtering-grown high-k HfO2 gate dielectrics [J].
Deng, B. ;
He, G. ;
Chen, X. S. ;
Chen, X. F. ;
Zhang, J. W. ;
Liu, M. ;
Lv, J. G. ;
Sun, Z. Q. .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2014, 25 (09) :4163-4169
[7]   Effect of films thickness and hydrogen annealing on passivation performance of plasma ALD based Hafnium oxide films [J].
Devi, Meenakshi ;
Tomer, Shweta ;
Pathi, Prathap ;
Vandana .
PHYSICA SCRIPTA, 2024, 99 (05)
[8]   Grain fragmentation and phase transformations in hafnium oxide induced by swift heavy ion irradiation [J].
Dhanunjaya, M. ;
Avasthi, D. K. ;
Pathak, A. P. ;
Khan, S. A. ;
Rao, S. V. S. Nageswara .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2018, 124 (09)
[9]   OPTICAL-PROPERTIES AND ENVIRONMENTAL STABILITY OF OXIDE COATINGS DEPOSITED BY REACTIVE SPUTTERING [J].
EDLOU, SM ;
SMAJKIEWICZ, A ;
ALJUMAILY, GA .
APPLIED OPTICS, 1993, 32 (28) :5601-5605
[10]   A study of some optical properties of hafnium dioxide (HfO2) thin films and their applications [J].
Fadel, M ;
Azim, OA ;
Omer, OA ;
Basily, RR .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 66 (03) :335-343
1234