Workflow for Modeling Electrical Properties of Piezoresistive Silicon MEMS Devices

被引：0
|
作者：
Schwartz, Bernhard [1 ]
Brokmann, Geert [1 ]
Ortlepp, Thomas [1 ]
机构：
[1] CiS Forsch Inst Mikrosensor GmbH, Erfurt, Germany
来源：
2024 SYMPOSIUM ON DESIGN, TEST, INTEGRATION AND PACKAGING OF MEMS/MOEMS, DTIP 2024 | 2024年
关键词：
Silicon; Piezoresistance; Sensor; MEMS; FEM; CARRIER MOBILITIES;
D O I：
10.1109/DTIP62575.2024.10613182
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A workflow has been developed to model the electrical properties of piezoresistive silicon micro-electromechanical system (MEMS) devices, such as silicon pressure sensors and strain gauges. The workflow involves physically-based simulation of the semiconductor processing and the mechanical properties of the structure using finite element methods (FEM). Additionally, the calculation of the mobility of majority charge carriers using physical models is involved. This workflow enables the computation of the electrical characteristics of MEMS devices across a wide range of temperatures (-40 - 130 degrees C) in relation to dopant concentration, stress, and temperature, prior to fabrication.
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页数：5
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