Optimized Design of Trench Termination for High-Voltage β-Ga2O3 Trench MOS Barrier Schottky Diode with Anode Electrode Extension

A trench termination with anode electrode extension structure for beta-Ga2O3 diode was designed and simulation studied. The simulation employed Sentaurus TCAD simulator. The influences of device's geometric parameters on the device's breakdown characteristics has been investigated. These geometric parameters include termination trench depth, anode electrode extension length, trench termination oxide layer thickness, and trench termination width. Optimization results was provided. The simulation results revealed an 88% increase in breakdown voltage for the optimized termination compared to the structure without terminations. Additionally, the termination efficiency approached almost 100%. Under the simulation condition, a 10 mu m increase in the trench termination width resulted in a 20% decrease in leakage current. All these results will provide valuable references for further research on beta-Ga2O3 trench barrier termination.