Lateral radiation of the substrate of electrically pumped organic light-emitting diodes

被引:0
作者
Zhao, Bian-li [1 ]
Wang, Jing [1 ]
Li, Wen-wen [1 ]
Zhang, Jing [1 ]
Sun, Ning [1 ]
Wang, Deng-ke [1 ]
Jiang, Nan [1 ]
机构
[1] Yunnan Univ, Key Lab Yunnan Prov Higher Educ, Dept Phys, Inst Optoeletron Device Engn, Kunming 650504, Peoples R China
关键词
organic light-emitting diode; lateral emission spectrum; full width at half maximum; leaky wave- guide mode; polarization characteristic; AMPLIFIED SPONTANEOUS EMISSION; OPTICAL AMPLIFICATION; CUTOFF WAVELENGTH; ELECTROLUMINESCENCE; FILMS; PHOTOLUMINESCENCE; EFFICIENCY; POLYMER;
D O I
10.37188/CO.2023-0190
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
: There is a significant narrowing of the lateral radiation spectrum of the substrate of organic light- emitting diodes as compared to the forward radiation spectrum. Studying the factors that affect the lateral radiation spectrum narrowing of the device and further reducing the spectral linewidth can provide a foundation for the study of the electrically pumped organic light-emitting diode laser radiation. We study the full width at half maximum, peak wavelength, and polarization characteristics of lateral radiation spectrum in organic light-emitting diode substrate, with the thickness changes of hole transport layer NPB. The lateral radiation spectra of organic light-emitting diode with Ag film evaporated on both sides of the substrate edge are compared with those of organic light-emitting diode without Ag film. The full width at half maximum of the lateral radiation spectrum with Ag film is narrower. When the NPB thickness is 130 nm, the full width at half maximum of the lateral radiation spectrum in the device substrate reaches its narrowest, which is 14 nm. This shows that the optical resonator will affect the light propagating laterally in an organic light-emitting diode substrate when mirrors are provided on both edge sides of the substrate. The results indicate new approaches to narrowing the radiation spectrum and amplifying the light of organic light-emitting diodes.
引用
收藏
页码:750 / 756
页数:8
相关论文
共 30 条
[1]   High EQE and High Brightness Solution-Processed TADF Light-Emitting Transistors and OLEDs [J].
Ahmad, Viqar ;
Sobus, Jan ;
Bencheikh, Fatima ;
Mamada, Masashi ;
Adachi, Chihaya ;
Lo, Shih-Chun ;
Namdas, Ebinazar B. .
ADVANCED OPTICAL MATERIALS, 2020, 8 (18)
[2]   Highly efficient phosphorescent emission from organic electroluminescent devices [J].
Baldo, MA ;
O'Brien, DF ;
You, Y ;
Shoustikov, A ;
Sibley, S ;
Thompson, ME ;
Forrest, SR .
NATURE, 1998, 395 (6698) :151-154
[3]   Effect of metal films on the photoluminescence and electroluminescence of conjugated polymers [J].
Becker, H ;
Burns, SE ;
Friend, RH .
PHYSICAL REVIEW B, 1997, 56 (04) :1893-1905
[4]   Device efficiency of organic light-emitting diodes: Progress by improved light outcoupling [J].
Bruetting, Wolfgang ;
Frischeisen, Joerg ;
Schmidt, Tobias D. ;
Scholz, Bert J. ;
Mayr, Christian .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2013, 210 (01) :44-65
[5]   Weak microcavity effects in organic light-emitting devices [J].
Bulovic, V ;
Khalfin, VB ;
Gu, G ;
Burrows, PE ;
Garbuzov, DZ ;
Forrest, SR .
PHYSICAL REVIEW B, 1998, 58 (07) :3730-3740
[6]   Relationship between electroluminescence and current transport in organic heterojunction light-emitting devices [J].
Burrows, PE ;
Shen, Z ;
Bulovic, V ;
McCarty, DM ;
Forrest, SR ;
Cronin, JA ;
Thompson, ME .
JOURNAL OF APPLIED PHYSICS, 1996, 79 (10) :7991-8006
[7]   Reduced threshold of optically pumped amplified spontaneous emission and narrow line-width electroluminescence at cutoff wavelength from bilayer organic waveguide devices [J].
Chang, Jui-Fen ;
Huang, Yu-Syuan ;
Chen, Po-Ting ;
Kao, Ruei-Lin ;
Lai, Xuan-You ;
Chen, Chii-Chang ;
Lee, Cheng-Chung .
OPTICS EXPRESS, 2015, 23 (11) :14695-14706
[8]   SPONTANEOUS EMISSION FROM PLANAR MICROSTRUCTURES [J].
DEPPE, DG ;
LEI, C ;
LIN, CC ;
HUFFAKER, DL .
JOURNAL OF MODERN OPTICS, 1994, 41 (02) :325-344
[9]   Plastic lasers: Semiconducting polymers as a new class of solid-state laser materials [J].
DiazGarcia, MA ;
Hide, F ;
Schwartz, BJ ;
Andersson, MR ;
Pei, QB ;
Heeger, AJ .
SYNTHETIC METALS, 1997, 84 (1-3) :455-462
[10]   Femtosecond relaxation of photoexcitations in a poly(para-phenylene)-type ladder polymer [J].
Graupner, W ;
Leising, G ;
Lanzani, G ;
Nisoli, M ;
DeSilvestri, S ;
Scherf, U .
PHYSICAL REVIEW LETTERS, 1996, 76 (05) :847-850