Deposition of TiC Film by Surface Wave Plasma with Titanium Counter Electrode

被引：0

作者：

Ushiro, Yusuke ^{[1
]}

Tanaka, Ippei ^{[2
]}

Harada, Yasunori ^{[2
]}

Ogisu, Takashi ^{[1
]}

机构：

[1] Umetoku Co Ltd, Osaka 5308377, Japan

[2] Univ Hyogo, Grad Sch Engn, Himeji 6712280, Japan

来源：

MATERIALS TRANSACTIONS | 2024年 / 65卷 / 08期

关键词：

titanium carbide; titanium counter electrode; surface wave plasma; BEHAVIOR;

D O I：

10.2320/matertrans.MT-M2024016

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

TiC fi lms were prepared by a process that combines microwave plasma CVD with a sputtering method using titanium electrode to improve fi lm deposition speed. The fi lm depositions were carried out while changing the substrate bias voltage to 0,- 200, and- 400 V. The fl ow rate of CH4 4 gas was performed under three conditions of 2.0, 1.0, and 0 sccm. By applying the substrate bias voltage, titanium oxide was easily deposited and the fi lm hardness was lowered. The fi lm hardness was high in the specimens without the substrate bias voltage, and the maximum hardness was 22 GPa. The maximum fi lm deposition speed was 24 mu m/h. / h. [doi:10.2320/matertrans.MT-M2024016]

引用

页码：973 / 976

页数：4

共 23 条

[1] Reactive sputtering of titanium in Ar/CH4 gas mixture: Target poisoning and film characteristics [J].