Thermodynamic properties of InxGa1_ xN double quantum wire in the presence of impurity and Rashba spin-orbit interaction

We investigate the effects of impurities and Rashba spin-orbit interaction on the thermodynamic properties in the InxGa1_ xN double quantum wire. The energy and eigenvectors of our system are obtained through analytical diagonalization in the presence of external fields, Rashba spin-orbit interaction, and impurities. These energy levels are used to analyse the entropy, mean energy, heat capacity, and free energy of the InxGa1_ xN double quantum wire. The system's entropy increases with temperature and Rashba spin-orbit interaction but decreases with impurity. At low temperatures, entropy appears weakly dependent on impurity and exhibits minimal dependence on it. The heat capacity shows a peak structure and rises as impurity and the Rashba spin-orbit interaction increase at low temperatures. At low temperatures, the system's mean energy gradually increases. As the temperature rises, the mean energy becomes independent of interaction strength and increases more rapidly. The mean energy decreases with increasing impurity and Rashba spin-orbit interaction. The thermodynamic properties of our system, such as entropy, heat capacity, mean energy, and free energy, make it suitable for applications in electronics (such as the fabrication of energy storage devices and transistors), industry (such as the operation of magnetic levitation trains), and medicine (such as MRI).