A non-ideal hybridization issue for vertical TFET-based dielectric-modulated biosensor

被引：0

作者：

Agha, Dena N. Qasim ^{[1
]}

Yahya, Zahraa ^{[2
]}

机构：

[1] Ninevah Univ, Coll Elect Engn, Elect Engn Dept, Mosul, Iraq

[2] Ninevah Univ, Coll Elect Engn, Dept Elect Engn, Mosul, Iraq

来源：

OPEN ENGINEERING | 2024年 / 14卷 / 01期

关键词：

vertical TFET-based biosensor; steric hindrance; heterojunctions structure; drain current sensitivity; biomolecules; FIELD-EFFECT TRANSISTOR; LABEL-FREE DETECTION; PERFORMANCE ASSESSMENT; GATE;

D O I：

10.1515/eng-2024-0061

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This article evaluates SiGe/Si heterojunction vertical tunnel field-effect transistor (VTFET-hetero) biosensors, using SiGe in the source region to enhance sensitivity. It detects smaller analyte concentrations for biomedical applications. Non-ideal sensor behavior is explained by steric hindrance and irregular probe/receptor positions. Based on the simulation results, sensitivity is determined for four different cases in which partially filled nanogaps have decreasing, increasing, concave, and convex profiles. Simulation shows concave step profiles having the highest sensitivity. The VTFET-hetero structure exhibits higher sensitivity than horizontal biosensors, achieving a sensitivity of 8.64 x 107 for immobilized charged biomolecules.

引用

页数：10

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