Anomalous photovoltaic effect in Na0.5Bi0.5TiO3-based ferroelectric ceramics based on domain engineering

被引:5
作者
Yang, Xinxiang [1 ]
Gao, Xing [1 ]
Zhang, Shan [1 ]
Zhao, Jun [1 ]
Zhang, Xinlei [1 ]
Song, Xin [1 ]
Lu, Chunxiao [1 ]
Li, Yong [1 ]
Zhang, Liwen [1 ]
Hao, Xihong [1 ]
机构
[1] Inner Mongolia Univ Sci & Technol, Sch Mat & Met, Inner Mongolia Key Lab Ferroelectr Related New Ene, Baotou 014010, Peoples R China
关键词
Anomalous photovoltaic effect; Ferroelectric; Domain; NBT-BST ceramics; Polarization; LEAD-FREE CERAMICS; ENERGY; BANDGAP; DENSITY; MULTILAYERS;
D O I
10.1016/j.jmat.2023.10.010
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The anomalous photovoltaic (APV) effect is promising for high-performance ferroelectric materials and devices in photoelectric applications. However, it is a challenge how to tune the APV effect by utilizing the characteristic structure of ferroelectrics. Here, a domain engineering strategy is proposed to enhance the APV effect in lead-free 0.88(Na0.5Bi0.5TiO3)-0.12(Ba1-1.5xSmxTiO3) (NBT-BST) ferroelectric ceramics. By tuning the domain size based on Sm3 & thorn; doping, a maximum open-circuit voltage (VOC) of 18.1 V is obtained when Sm3 & thorn; content is 0.75%, which is much larger than its bandgap (Eg). The mechanism of this large VOC originates from the multiple positive effects induced by the small-size domain, where decreasing domain size enhances ferroelectric polarization and net interface barrier potential, leading to a large driving electric field. Moreover, the APV effect exhibits a giant temperature sensitivity due to the dramatic evolution of small-size domain in the temperature field. This work sheds light on the exploration of ferroelectrics with APV effect and inspires their future high-performance optoelectronic device applications. (c) 2023 The Authors. Published by Elsevier B.V. on behalf of The Chinese Ceramic Society. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).
引用
收藏
页码:975 / 983
页数:9
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