High-performance solar-blind photodetector based on Si-doped α-Ga2O3 thin films grown by mist chemical vapor deposition

被引：8

作者：

Ouyang, Huijia ^{[1
]}

Wang, Xiaojie ^{[2
]}

Li, Yang ^{[2
]}

Wang, Runchen ^{[1
]}

Wang, Yaxue ^{[2
]}

Lin, Na ^{[2
]}

He, Tao ^{[2
]}

Feng, Hua Yu ^{[1
]}

Mu, Wenxiang ^{[2
]}

Jia, Zhitai ^{[2
,3
]}

机构：

[1] Shandong Univ, Sch Integrated Circuits, Jinan 250100, Shandong, Peoples R China

[2] Shandong Univ, Inst Novel Semicond, Inst Crystal Mat, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China

[3] Shandong Res Inst Ind Technol, Jinan 250100, Shandong, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2024年 / 1003卷

基金：

中国国家自然科学基金;

关键词：

alpha-Ga; 2; O; 3; Mist-CVD; Heteroepitaxy; Solar-blind photodetector; Defect reduction; UV PHOTODETECTOR; TEMPERATURE;

D O I：

10.1016/j.jallcom.2024.175593

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

alpha-Ga2O3 has gained increasing attention in the field of photodetectors because of its wide bandgap and exceptional chemical and physical properties. Si-doped alpha-Ga2O3 single-crystal epitaxial films were successfully deposited on sapphire substrates using an affordable and non-vacuum-based mist chemical vapor deposition (Mist-CVD) technique. An interdigital metal-semiconductor-metal (MSM) photodetector with excellent performance was prepared by using the thin film. At 254 nm illumination and a bias voltage of 20 V, the photodetector has a high light-to-dark current ratio of 3.24x106, a responsivity of 3.23x102 A/W, a detectivity of 8.80x1015 Jones, and an external quantum efficiency of 1.58x105%. The results show that Si-doped alpha-Ga2O3 thin films have great potential for application in high-performance photodetectors.

引用

页数：7

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