Is SiC a Predominant Technology for Future High Power Electronics?: A Critical Review

被引：2

作者：

Fletcher, A. S. Augustine ^{[1
]}

Nirmal, D. ^{[1
]}

Ajayan, J. ^{[2
]}

Murugapandiyan, P. ^{[3
]}

机构：

[1] Karunya Inst Technol & Sci, Dept Elect & Commun Engn, Coimbatore, India

[2] SR Univ, Dept Elect & Commun Engn, Warangal, India

[3] Anil Neerukonda, Dept Elect & Commun Engn, Visakhapatnam, India

来源：

CURRENT NANOSCIENCE | 2025年 / 21卷 / 01期

关键词：

SiC; SiC MOSFET; Si; Si-IGBT; high power device; power electronics; THRESHOLD-VOLTAGE INSTABILITY; AL2O3/LAALO3/SIO2; GATE-STACK; 4H-SIC MOSFETS; CHANNEL MOBILITY; HIGH-TEMPERATURE; HIGH-FREQUENCY; TRENCH MOSFET; IGBT; OPTIMIZATION; RELIABILITY;

D O I：

10.2174/0115734137268803231120111751

中图分类号：

Q81 [生物工程学（生物技术）]; Q93 [微生物学];

学科分类号：

071005 ; 0836 ; 090102 ; 100705 ;

摘要：

Due to the magnificent properties of Silicon Carbide (SiC), such as high saturation drift velocity, large operating temperature, higher cut-off and maximum frequency (fT and fmax), high thermal conductivity and large breakdown voltages (BV), it is desirable for high power electronics. With the latest advancements in semiconductor materials and processing technologies, diverse high-power applications such as inverters, power supplies, power converters and smart electric vehicles are implemented using SiC-based power devices. Especially, SiC MOSFETs are mostly used in high-power applications due to their capability to achieve lower switching loss, higher switching speed and lower ON resistance than the Si-based (Insulated gate bipolar transistor) IGBTs. In this paper, a critical study of SiC MOSFET architectures, emerging dielectric techniques, mobility enhancement methods and irradiation effects are discussed. Moreover, the roadmap of Silicon Carbide power devices is also briefly summarized.

引用

页码：37 / 51

页数：15

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