Si1-x-yGeySnx alloy formation by Sn ion implantation and flash lamp annealing

被引：0

作者：

Steuer, O. ^{[1
,2
,3
]}

Michailow, M. ^{[4
]}

Huebner, R. ^{[1
]}

Pyszniak, K. ^{[5
]}

Turek, M. ^{[5
]}

Kentsch, U. ^{[1
]}

Ganss, F. ^{[1
]}

Khan, M. M. ^{[1
]}

Rebohle, L. ^{[1
]}

Zhou, S. ^{[1
]}

Knoch, J. ^{[4
]}

Helm, M. ^{[1
,6
]}

Cuniberti, G. ^{[2
,3
]}

Georgiev, Y. M. ^{[1
,7
]}

Prucnal, S. ^{[1
]}

机构：

[1] Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, Bautzner Landstr 400, D-01328 Dresden, Germany

[2] Tech Univ Dresden, Inst Mat Sci, D-01069 Dresden, Germany

[3] Tech Univ Dresden, Max Bergmann Ctr, D-01069 Dresden, Germany

[4] Rhein Westfal TH Aachen, Inst Semicond Elect, D-52074 Aachen, Germany

[5] Maria Curie Sklodowska Univ Lublin, Inst Phys, M Curie Sklodowskiej 1, Lublin, Poland

[6] Tech Univ Dresden, Ctr Adv Elect Dresden, Dresden, Germany

[7] Bulgarian Acad Sci, Inst Elect, 72 Tsarigradsko Chausse Blvd, Sofia 1784, Bulgaria

来源：

JOURNAL OF APPLIED PHYSICS | 2024年 / 136卷 / 06期

关键词：

Compendex;

D O I：

10.1063/5.0220639

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

For many years, Si1-yGey alloys have been applied in the semiconductor industry due to the ability to adjust the performance of Si-based nanoelectronic devices. Following this alloying approach of group-IV semiconductors, adding tin (Sn) into the alloy appears as the obvious next step, which leads to additional possibilities for tailoring the material properties. Adding Sn enables effective bandgap and strain engineering and can improve the carrier mobilities, which makes Si1-x-yGeySnx alloys promising candidates for future opto- and nanoelectronics applications. The bottom-up approach for epitaxial growth of Si1-x-yGeySnx, e.g., by chemical vapor deposition and molecular beam epitaxy, allows tuning the material properties in the growth direction only; the realization of local material modifications to generate lateral heterostructures with such a bottom-up approach is extremely elaborate, since it would require the use of lithography, etching, and either selective epitaxy or epitaxy and chemical-mechanical polishing, giving rise to interface issues, non-planar substrates, etc. This article shows the possibility of fabricating Si(1-x-y)GeySn(x) alloys by Sn ion beam implantation into Si1-yGey layers followed by millisecond-range flash lamp annealing (FLA). The materials are investigated by Rutherford backscattering spectrometry, micro-Raman spectroscopy, x-ray diffraction, and transmission electron microscopy. The fabrication approach was adapted to ultra-thin Si1-yGey layers on silicon-on-insulator substrates. The results show the fabrication of single-crystalline Si(1-x-y)GeySn(x) with up to 2.3 at. % incorporated Sn without any indication of Sn segregation after recrystallization via FLA. Finally, we exhibit the possibility of implanting Sn locally in ultra-thin Si1-yGey films by masking unstructured regions on the chip, thus demonstrating the realization of vertical as well as lateral Si1-x-yGeySnx heterostructures by Sn ion implantation and flash lamp annealing. (c) 2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution-NonCommercial 4.0International (CC BY-NC) license (https://creativecommons.org/licenses/by-nc/4.0/).

引用

页数：9