A D-Band 13-mW Dual-Mode CMOS LNA for Joint Radar-Communication in 22-nm FD-SOI CMOS

被引：1

作者：

Balasubramanian, Shankkar ^{[1
,2
]}

Vaesen, Kristof ^{[3
]}

Kankuppe, Anirudh ^{[3
]}

Park, Sehoon ^{[4
]}

Wulff, Carsten ^{[1
,2
]}

机构：

[1] Nordic Semicond ASA, IC Dev, N-7052 Trondheim, Norway

[2] Norwegian Univ Sci & Technol, Dept Elect Syst, N-7034 Trondheim, Norway

[3] IMEC, B-3001 Leuven, Belgium

[4] Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea

来源：

IEEE SOLID-STATE CIRCUITS LETTERS | 2024年 / 7卷

关键词：

CMOS; communication; D-band; gain boosting; low-noise amplifiers (LNAs); mm-wave; radar;

D O I：

10.1109/LSSC.2024.3455889

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This letter presents a D-band low-noise amplifier (LNA) for joint radar-communication applications in 22-nm CMOS technology. The 4-stage LNA uses transistor switching and bias class changes to achieve dual-mode functionality. In the radar mode, the LNA achieves gain of 17 dB, noise figure (NF) of 7.7 dB, 3-dB bandwidth (BW) of 117-129 GHz, and IP1dB of -20 dBm, respectively. In the communication mode, the LNA achieves gain of 22.6 dB, NF of 8.5 dB, BW of 115.9-128.9 GHz, and IP1dB of -29 dBm, respectively. The power consumption for the radar and communication modes is 13 and 12.2 mW, respectively. The LNA has a core area of 0.06 mm(2).

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页码：259 / 262

页数：4

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