Thermal properties of ZrSe 2 and HfS2/ZrSe2 heterojunctions subjected to tensile strain

被引：1

作者：

Sun, Shihang ^{[1
]}

Yang, Lu ^{[1
]}

Bao, Jinlin ^{[1
]}

Yang, Zhonghua ^{[1
]}

Zhao, Yanshen ^{[1
]}

Wei, Xingbin ^{[1
]}

Liu, Huaidong ^{[1
]}

Tang, Xinying ^{[1
]}

Ni, Junjie ^{[1
]}

机构：

[1] Shenyang Univ Technol, Coll Construct Engn, Shenyang 110870, Peoples R China

来源：

COMPUTATIONAL MATERIALS SCIENCE | 2024年 / 244卷

基金：

中国国家自然科学基金;

关键词：

HfS2/ZrSe2; heterojunction; Biaxial strain; Phonon spectrum; Thermal; OPTICAL-PROPERTIES; ENHANCEMENT;

D O I：

10.1016/j.commatsci.2024.113227

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, the phonon spectra of ZrSe2, HfS2, and HfS2/ZrSe2 heterojunctions are calculated based on the density-functional perturbation method for biaxial tensile strains to study their stability and thermal properties. It was found that monolayers of ZrSe2 and HfS2 should not be subjected to 200 K and tends to remain constant when the temperature is 200 K.

引用

页数：8

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