Thermal properties of ZrSe 2 and HfS2/ZrSe2 heterojunctions subjected to tensile strain

被引:1
作者
Sun, Shihang [1 ]
Yang, Lu [1 ]
Bao, Jinlin [1 ]
Yang, Zhonghua [1 ]
Zhao, Yanshen [1 ]
Wei, Xingbin [1 ]
Liu, Huaidong [1 ]
Tang, Xinying [1 ]
Ni, Junjie [1 ]
机构
[1] Shenyang Univ Technol, Coll Construct Engn, Shenyang 110870, Peoples R China
基金
中国国家自然科学基金;
关键词
HfS2/ZrSe2; heterojunction; Biaxial strain; Phonon spectrum; Thermal; OPTICAL-PROPERTIES; ENHANCEMENT;
D O I
10.1016/j.commatsci.2024.113227
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, the phonon spectra of ZrSe2, HfS2, and HfS2/ZrSe2 heterojunctions are calculated based on the density-functional perturbation method for biaxial tensile strains to study their stability and thermal properties. It was found that monolayers of ZrSe2 and HfS2 should not be subjected to 200 K and tends to remain constant when the temperature is 200 K.
引用
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页数:8
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