Dynamic switching operation of diamond MOSFETs with NO2 p-type doping and Al2O3 gate insulation and passivation

被引：1

作者：

Saha, Niloy Chandra ^{[1
]}

Shiratsuchi, Tomoki ^{[1
]}

Eguchi, Masanori ^{[2
]}

Oishi, Toshiyuki ^{[1
]}

Kasu, Makoto ^{[1
]}

机构：

[1] Saga Univ, Dept Elect & Elect Engn, Saga 8408502, Japan

[2] Natl Inst Technol, Kure Coll, Hiroshima 7378506, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2024年 / 42卷 / 05期

基金：

日本学术振兴会;

关键词：

GHZ; FET;

D O I：

10.1116/5.0218780

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Diamond metal-oxide-semiconductor field-effect transistor (MOSFET) exhibited durable and stable dynamic switching characteristics at an unprecedentedly high voltage of -105 V. Switching turn-on and turn-off times were measured to be 7.64 and 4.93 ns, respectively, with a corresponding total switching loss of 20.03 pJ for a load resistance of 50 Omega. No Miller effect was observed due to the low Miller capacitance of 11 pF/mm. This study suggests the potentiality of diamond MOSFETs in prospective high-voltage, high-speed applications.

引用

页数：6

共 17 条

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