Ge/Si(001) Heteroepitaxial Layers Doped in the HW CVD Process by Impurity Evaporation from a Sublimating Ge Source

被引：0

作者：

Titova, A. M. ^{[1
]}

Shengurov, V. G. ^{[1
]}

Denisov, S. A. ^{[1
]}

Chalkov, V. Yu. ^{[1
]}

Zaitsev, A. V. ^{[1
]}

Alyabina, N. A. ^{[1
]}

Kudrin, A. V. ^{[1
]}

Zdoroveishev, A. V. ^{[1
]}

机构：

[1] Lobachevskii State Univ Nizhny Novgorod, Nizhnii Novgorod 603950, Russia

来源：

SEMICONDUCTORS | 2024年 / 58卷 / 04期

基金：

俄罗斯科学基金会;

关键词：

heteroepitaxial layers; evaporation by sublimation; HW CVD; Si; Ge; n- and p-type alloying; MOLECULAR-BEAM EPITAXY; SURFACE SEGREGATION; GROWTH; FILMS;

D O I：

10.1134/S1063782624040158

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Ge/Si(001) heteroepitaxial layers were grown by HW CVD and in situ doped with Ga or Sb using a separate resistively heated Ge source containing one of these impurities. Sublimation of the germanium source gave a concentration of similar to 1 x 10(19) cm(-3) gallium atoms in the layers. The mode of introduction of this impurity into the epitaxial layers was investigated as a function of hot filament (Ta) temperature and growth temperature using C-V and Hall effect. To increase the maximum concentration of charge carriers in the Ge/Si(001) layers, a melt zone was formed on the Ge source during the growth of the layers, which made it possible to increase the concentration of impurities in the Ge layer by almost an order of magnitude.

引用

页码：358 / 363

页数：6

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