Simulation and Fabrication of Monolithic III-V Photodetectors on Si: The Role of Growth Facets and Localization of Heterojunctions

被引：0
|
作者：
Martinez-Oliver, Cristina [1 ,2 ]
Scherrer, Markus [1 ,3 ,4 ]
Iadanza, Simone [1 ,3 ,4 ]
Schmid, Heinz [1 ]
Moselund, Kirsten [3 ,4 ]
Georgiev, Vihar [5 ]
机构：
[1] IBM Res Europe Zurich, CH-8803 Ruschlikon, Switzerland
[2] Univ Glasgow, Sch Engn, Device Modelling Grp, Rankine Bldg, Glasgow City G12 8QQ, Scotland
[3] Paul Scherrer Inst, CH-5232 Villigen, Switzerland
[4] Ecole Polytech Fed Lausanne, CH-1012 Lausanne, Switzerland
[5] Univ Glasgow, James Watt Sch Engn, Device Modelling Grp, Glasgow G12 8QQ, Scotland
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2024年 / 71卷 / 10期
关键词：
Silicon; Photonics; Performance evaluation; Indium phosphide; III-V semiconductor materials; Substrates; Optical device fabrication; III-V; fabrication; nanoelectronics; nanowires (NWs); optoelectronics; photodetectors (PDs); simulations; technology computer-aided design (TCAD); template-assisted selective epitaxy (TASE); SILICON; CHIP;
D O I：
10.1109/TED.2024.3437333
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, we provide important parameters to take into account when fabricating in-plane III-V photodetectors (PDs) integrated on silicon (Si) using template-assisted selective epitaxy (TASE). Their performance has previously been demonstrated, and here, we have investigated the cause of the device-to-device variability in their current-voltage (I-V) characteristics. We do this by fabricating devices with variations of the geometry and analyzing their behavior by comparison with technology computer-aided design (TCAD) simulations. We demonstrate the crucial role of the crystal orientation of the substrate, which may lead to nonuniform growth rate, length, and growth front shape. With the use of TCAD simulations, we have illustrated the relevance of the position of the i-region with respect to the metal contacts of the device.
引用
收藏
页码：6124 / 6130
页数：7
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