Simulation and Fabrication of Monolithic III-V Photodetectors on Si: The Role of Growth Facets and Localization of Heterojunctions

被引：0
|
作者：
Martinez-Oliver, Cristina [1 ,2 ]
Scherrer, Markus [1 ,3 ,4 ]
Iadanza, Simone [1 ,3 ,4 ]
Schmid, Heinz [1 ]
Moselund, Kirsten [3 ,4 ]
Georgiev, Vihar [5 ]
机构：
[1] IBM Res Europe Zurich, CH-8803 Ruschlikon, Switzerland
[2] Univ Glasgow, Sch Engn, Device Modelling Grp, Rankine Bldg, Glasgow City G12 8QQ, Scotland
[3] Paul Scherrer Inst, CH-5232 Villigen, Switzerland
[4] Ecole Polytech Fed Lausanne, CH-1012 Lausanne, Switzerland
[5] Univ Glasgow, James Watt Sch Engn, Device Modelling Grp, Glasgow G12 8QQ, Scotland
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2024年 / 71卷 / 10期
关键词：
Silicon; Photonics; Performance evaluation; Indium phosphide; III-V semiconductor materials; Substrates; Optical device fabrication; III-V; fabrication; nanoelectronics; nanowires (NWs); optoelectronics; photodetectors (PDs); simulations; technology computer-aided design (TCAD); template-assisted selective epitaxy (TASE); SILICON; CHIP;
D O I：
10.1109/TED.2024.3437333
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, we provide important parameters to take into account when fabricating in-plane III-V photodetectors (PDs) integrated on silicon (Si) using template-assisted selective epitaxy (TASE). Their performance has previously been demonstrated, and here, we have investigated the cause of the device-to-device variability in their current-voltage (I-V) characteristics. We do this by fabricating devices with variations of the geometry and analyzing their behavior by comparison with technology computer-aided design (TCAD) simulations. We demonstrate the crucial role of the crystal orientation of the substrate, which may lead to nonuniform growth rate, length, and growth front shape. With the use of TCAD simulations, we have illustrated the relevance of the position of the i-region with respect to the metal contacts of the device.
引用
收藏
页码：6124 / 6130
页数：7
相关论文
共 28 条
  • [1] Monolithic III-V/Si Integration
    Fitzgerald, E. A.
    Bulsara, M. T.
    Bai, Y.
    Cheng, C.
    Liu, W. K.
    Lubyshev, D.
    Fastenau, J. M.
    Wu, Y.
    Urtega, M.
    Ha, W.
    Bergman, J.
    Brar, B.
    Drazek, C.
    Daval, N.
    Letertre, F. D.
    Hoke, W. E.
    LaRoche, J. R.
    Herrick, K. J.
    Kazior, T. E.
    GRAPHENE AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS, 2009, 19 (05): : 345 - +
  • [2] Si CMOS Contacts to III-V Materials for Monolithic Integration of III-V and Si Devices
    Pacella, N. Y.
    Bulsara, M. T.
    Fitzgerald, E. A.
    SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS, 2011, 35 (02): : 225 - 229
  • [3] Large-Scale Monolithic Fabrication of III-V Vertical Nanowires on a Standard Si(100) Microelectronic Substrate
    Lecestre, Aurelie
    Martin, Mickael
    Cristiano, Filadelfo
    Baron, Thierry
    Larrieu, Guilhem
    ACS OMEGA, 2022, 7 (07): : 5836 - 5843
  • [4] Progress and Challenges in the Direct Monolithic Integration of III-V Devices and Si CMOS on Silicon Substrates
    Kazior, T. E.
    LaRoche, J. R.
    Lubyshev, D.
    Fastenau, J. M.
    Liu, W. K.
    Urteaga, M.
    Ha, W.
    Bergman, J.
    Choe, M. J.
    Bulsara, M. T.
    Fitzgerald, E. A.
    Smith, D.
    Clark, D.
    Thompson, R.
    Drazek, C.
    Daval, N.
    Benaissa, L.
    Augendre, E.
    2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM), 2009, : 100 - +
  • [5] Design and Growth of III-V on Si Microwire Array Tandem Solar Cells
    Chen, Christopher T.
    Turner-Evans, Daniel B.
    Emmer, Hal
    Aloni, Shaul
    Atwater, Harry A.
    2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2013, : 3397 - 3401
  • [6] Universal description of III-V/Si epitaxial growth processes
    Lucci, I.
    Charbonnier, S.
    Pedesseau, L.
    Vallet, M.
    Cerutti, L.
    Rodriguez, J. -B.
    Tournie, E.
    Bernard, R.
    Letoublon, A.
    Bertru, N.
    Le Corre, A.
    Rennesson, S.
    Semond, F.
    Patriarche, G.
    Largeau, L.
    Turban, P.
    Ponchet, A.
    Cornet, C.
    PHYSICAL REVIEW MATERIALS, 2018, 2 (06):
  • [7] Monolithic Growth of Patternable III-V on LiNbO3
    Chae, Hyun Uk
    Wu, Zezhi
    Yu, Yiyan
    Kim, Hee gon
    Sanchez Vazquez, Juan
    Lee, Chun-Ho
    Yu, Mengji
    Kapadia, Rehan
    CRYSTAL GROWTH & DESIGN, 2024, 24 (11) : 4466 - 4472
  • [8] Fabrication of high-efficiency heterogeneous Si/III-V integration with short optical vertical interconnect access
    Ng, Doris K. T.
    Pu, Jing
    Wang, Qian
    Lim, Kim-Peng
    Wei, Yongqiang
    Wang, Yadong
    Lai, Yicheng
    Ho, Seng-Tiong
    OPTOELECTRONIC INTEGRATED CIRCUITS XV, 2013, 8628
  • [9] MOVPE-preparation of Si(111) surfaces for III-V nanowire growth
    Steidl, Matthias
    Paszuk, Agnieszka
    Zhao, Weihong
    Brueckner, Sebastian
    Dobrich, Anja
    Supplie, Oliver
    Luczak, Johannes
    Kleinschmidt, Peter
    Doescher, Henning
    Hannappel, Thomas
    2013 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2013,
  • [10] Advances in the growth of lattice-matched III-V compounds on Si for optoelectronics
    Kunert, Bernardette
    Volz, Kerstin
    Stolz, Wolfgang
    2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2010,
123