Changes of the Crystalline Texture and Resistivity of Ti Films under Ion Bombardment

被引:0
作者
Selyukov, R. V. [1 ]
Amirov, I. I. [1 ]
Izyumov, M. O. [1 ]
Naumov, V. V. [1 ]
Mazaletskiy, L. A. [2 ]
机构
[1] Russian Acad Sci, Valiev Inst Phys & Technol, Yaroslavl Branch, Yaroslavl 150007, Russia
[2] Demidov State Univ, Yaroslavl 150003, Russia
关键词
thin films; titanium; ion bombardment; plasma; crystalline texture; resistivity; X-ray diffraction; PLASMA TREATMENT; RESIDUAL-STRESS; SUBSTRATE BIAS; TITANIUM FILMS; DEPOSITION; TEMPERATURE; EXPANSION; VOLTAGE;
D O I
10.1134/S1063784224040352
中图分类号
O59 [应用物理学];
学科分类号
摘要
Crystalline texture, microstracture and resistivity of ion irradiated 12-41 nm Ti films are investigated. Ion bombardment was carried out in Ar plasma by applying negative bias 20-30 V to the films. It is found that this treatment leads to the formation of [100] texture in films having initially mixed [100] + [001] texture. The less the film thickness and the higher the bias the less treatment time is required for the [100] texture formation. Ion irradiation of 12 and 22 nm films using bias 30 V leads to the increase of interplanar distances in surface normal direction by 3% and the decrease of film resistivity by 14-20%.
引用
收藏
页码:1348 / 1358
页数:11
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