Regulating Anderson localization with structural defect disorder

被引:0
|
作者
Cheng, Mouyang [1 ]
Chen, Haoxiang [1 ]
Chen, Ji [1 ,2 ,3 ,4 ,5 ]
机构
[1] Peking Univ, Sch Phys, Beijing 100871, Peoples R China
[2] Peking Univ, Interdisciplinary Inst Light Element Quantum Mat, Beijing 100871, Peoples R China
[3] Peking Univ, Res Ctr Light Element Adv Mat, Beijing 100871, Peoples R China
[4] Peking Univ, Frontiers Sci Ctr Nanooptoelectron, Beijing 100871, Peoples R China
[5] Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China
基金
中国国家自然科学基金; 国家重点研发计划; 北京市自然科学基金;
关键词
Anderson localization; structural defect disorder; electronic transport properties; 72.15.Rn; 73.63.-b; 61.43.-j; 61.43.Bn; RANDOM MAGNETIC-FIELD; SCALING THEORY; CONDUCTION; DIFFUSION; TRANSPORT; GRAPHENE; ABSENCE;
D O I
10.1088/1674-1056/ad711c
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Localization due to disorder has been one of the most intriguing theoretical concepts that evolved in condensed matter physics. Here, we expand the theory of localization by considering two types of disorders at the same time, namely, the original Anderson's disorder and the structural defect disorder, which has been suggested to be a key component in recently discovered two-dimensional amorphous materials. While increasing the degree of both disorders could induce localization of wavefunction in real space, we find that a small degree of structural defect disorder can significantly enhance the localization. As the degree of structural defect disorder increases, localized states quickly appear within the extended phase to enter a broad crossover region with mixed phases. We establish two-dimensional diagrams for the wavefunction localization and conductivity to highlight the interplay between the two types of disorders. Our theoretical model provides a comprehensive understanding of localization in two-dimensional amorphous materials and highlights the promising tunability of their transport properties.
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页数:6
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