Exploring Temperature-Dependent bandgap and Urbach energies in CdTe thin films for optoelectronic applications

被引：12
|
作者：
Surucu, O. [1 ]
Surucu, G. [2 ]
Gasanly, N. M. [3 ,4 ]
Parlak, M.
Isik, M. [1 ,5 ,6 ]
机构：
[1] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkiye
[2] Gazi Univ, Energy Syst Engn Dept, TR-06500 Ankara, Turkiye
[3] Middle East Tech Univ, Dept Phys, TR-06800 Ankara, Turkiye
[4] Baku State Univ, Virtual Int Sci Res Ctr, Baku 1148, Azerbaijan
[5] Izmir Bakircay Univ, Fac Engn & Architecture, Dept Biomed Engn, TR-35665 Izmir, Turkiye
[6] Izmir Bakircay Univ, Biomed Technol Design Applicat & Res Ctr, TR-35665 Izmir, Turkiye
来源：
MATERIALS LETTERS | 2024年 / 373卷
关键词：
Thin Films; Sputtering; Optical materials and properties; Solar energy materials; GAP;
D O I：
10.1016/j.matlet.2024.137078
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This study examines CdTe thin films deposited via RF magnetron sputtering, focusing on structural and optical properties. X-ray diffraction, Raman spectroscopy, and SEM assessed structural characteristics. Optical properties were analyzed through transmittance measurements from 10 to 300 K. Tauc plots and Varshni modeling revealed a temperature-dependent bandgap, increasing from 1.49 eV at room temperature to 1.57 eV at 10 K. Urbach energy rose from 82.7 to 93.7 meV with temperature. These results are essential for applications where temperature affects CdTe-based device performance.
引用
收藏
页数：4
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