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Trap Depth Distribution Determines Afterglow Kinetics: A Local Model Applied to ZnGa2O4:Cr3+
被引:3
|作者:
Romero, Manuel
[1
]
Castaing, Victor
[1
]
Lozano, Gabriel
[1
]
Miguez, Hernan
[1
]
机构:
[1] Univ Seville, Spanish Natl Res Council, Inst Mat Sci Seville, Seville 41092, Spain
来源:
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
|
2024年
/
15卷
/
35期
关键词:
DOPED ZINC GALLATE;
PERSISTENT LUMINESCENCE;
VISIBLE-LIGHT;
PHOSPHORESCENCE;
CURVES;
D O I:
10.1021/acs.jpclett.4c01296
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
Persistent luminescence materials have applications in diverse fields such as smart signaling, anticounterfeiting, and in vivo imaging. However, the lack of a thorough understanding of the precise mechanisms that govern persistent luminescence makes it difficult to develop ways to optimize it. Here we present an accurate model to describe the various processes that determine persistent luminescence in ZnGa2O4:Cr3+, a workhorse material in the field. A set of rate equations has been solved, and a global fit to both charge/discharge and thermoluminescence measurements has been performed. Our results establish a direct link between trap depth distribution and afterglow kinetics and shed light on the main challenges associated with persistent luminescence in ZnGa2O4:Cr3+ nanoparticles, identifying low trapping probability and optical detrapping as the main factors limiting the performance of ZnGa2O4:Cr3+, with a large margin for improvement. Our results highlight the importance of accurate modeling for the design of future afterglow materials and devices.
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页码:9129 / 9135
页数:7
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