Green synthetic GO, rGO, MoS2, and MoS2/rGO device functionality for storing power superconductors

被引:2
作者
Rahman, Bavaji Syed [1 ]
Ahamed, A. Jafar [1 ]
机构
[1] Bharathidasan Univ, Jamal Mohamed Coll, PG & Res Dept Chem DST Fist Funded, Tiruchirappalli 620020, Tamil Nadu, India
关键词
GO; rGO; MoS2; MoS2/rGO; CV; GCD; GRAPHENE; NANOSHEETS;
D O I
10.1007/s13399-024-05944-0
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Green tea leaves were used to produce graphene oxide (GO), reduced graphene oxide (rGO), molybdenum disulfide (MoS2), and molybdenum sulfide/reduced graphene oxide nanoparticles (MoS2/rGO NPs) in this investigation. The characteristics of the compounds that were made were checked using XRD, FESEM/EDX, FTIR, and UV absorption spectroscopy. The charge storage capacities of MoS2/rGO are revealed by the Trasatti study. Compared to MoS2, graphene's capacitance battery retention (QC) factor is much higher at 104.6 C g(-1). Because of the small redox reactions generated by the Mo oxidation levels during the cyclic voltage measurement, the MoS2 electrode CV patterns are elliptic instead of quasi-rectangular. The rGO/MoS2 nanoparticles exhibited the highest capacitance at 25 mV s(1) at 3.74 mF cm(2), with 2.31 and 1.01 mF cm(2) also contributing significantly. With GO, rGO, and MoS2, the galvanostatic charging and discharging current density is 0.2 mA cm(2). The reduced charged particle transmission impedance (Rct) of MoS2/rGO-R (4.4 X) compared to S (25.7 X) is the reason for the 3D conductive network that enhances conductance. Compared to S, MoS2/rGO-R has a reduced charge transfer resistance between the electrode and electrolyte interface and quicker electron mobility inside the material. In addition, its electrical resistance is lower, power efficiency is improved, and it has an excellent electrolytic device. Lastly, this method is important for the development of the electrolytic device used in supercapacitors since it is controllable, ecologically friendly, and suited for mass manufacturing.
引用
收藏
页码:8543 / 8552
页数:10
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