Coupling Charge-Regulated Interfacial Chemistry to Electrokinetic Ion Transport in Bipolar SiO2-Al2O3 Nanofluidic Diodes

被引:1
|
作者
Eden, Alexander [1 ]
Pennathur, Sumita [1 ]
机构
[1] Univ Calif Santa Barbara, Dept Mech Engn, Santa Barbara, CA 93106 USA
关键词
bipolar diodes; current rectification; electrokinetics; interfacial chemistry; nanofluidics; site-binding model; ELECTRICAL DOUBLE-LAYER; CONCENTRATION POLARIZATION; CURRENT RECTIFICATION; WATER DISSOCIATION; SURFACE-CHARGE; PH; MODEL; CONDUCTANCE; PROPAGATION; NANOPORES;
D O I
10.1002/admi.202400495
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Due to the surface-dominant nature of electrokinetic ion transport in confined geometries, ionic currents in nanofluidic channels are fundamentally governed by the interfacial chemistry of the constituent substrates. In this work, the intrinsic coupling between charge-regulated oxide surfaces and local changes in concentration and pH induced during the operation of bipolar nanofluidic diodes is numerically explored. Using a heterogeneous SiO2-Al2O3 nanochannel as a representative example, field-dependent ion accumulation and depletion effects are shown to have a marked effect on the local surface chemistry and resulting charge density of the amphoteric Al2O3 surface in particular. While the SiO2 surface tends to remain relatively indifferent to the presence of an applied potential due to its low point of zero charge (PZC), the comparatively high PZC of Al2O3 renders it much more susceptible to the extent of ion accumulation and depletion events which drive localized concentration and pH changes. Including this surface coupling in models can be necessary to capture the true behavior of real-world devices; comparison with a fixed-charge model demonstrates that only a fully coupled model can quantitatively reproduce reported experimental current measurements in heterogeneous SiO2-Al2O3 nanochannels, the limiting behavior of which is revealed to stem from this surface-to-bulk coupling.
引用
收藏
页数:12
相关论文
共 50 条
  • [1] CHARGE IN SIO2-AL2O3 DOUBLE-LAYERS ON SILICON
    ABOAF, JA
    KERR, DR
    BASSOUS, E
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (08) : 1103 - 1106
  • [2] DENSITIES OF SIO2-AL2O3 MELTS
    AKSAY, IA
    DAVIS, RF
    AMERICAN CERAMIC SOCIETY BULLETIN, 1972, 51 (09): : 720 - &
  • [3] DENSITIES OF SIO2-AL2O3 MELTS
    AKSAY, IA
    PASK, JA
    DAVIS, RF
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1979, 62 (7-8) : 332 - 336
  • [5] STRUCTURAL CHARACTERIZATION OF SIO2-AL2O3 AEROGELS
    HIMMEL, B
    GERBER, T
    BURGER, H
    HOLZHUTER, G
    OLBERTZ, A
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1995, 186 : 149 - 158
  • [6] DIFFUSION STUDIES IN SIO2-AL2O3 MELTS
    AKSAY, IA
    PASK, JA
    AMERICAN CERAMIC SOCIETY BULLETIN, 1973, 52 (09): : 710 - 710
  • [7] ACCUMULATION OF CHARGE AND DISCHARGE IN MIS-STRUCTURES WITH AL2O3 AND SIO2-AL2O3 LAYERS ON SILICON
    SADOFYEV, YG
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1978, (04): : 7 - 14
  • [8] NANOCOMPOSITE AEROGELS - THE SIO2-AL2O3 SYSTEM
    KOMARNENI, S
    ROY, R
    SELVARAJ, U
    MALLA, PB
    BREVAL, E
    JOURNAL OF MATERIALS RESEARCH, 1993, 8 (12) : 3163 - 3167
  • [9] MULLITE CRYSTALLIZATION IN SIO2-AL2O3 MELTS
    RISBUD, SH
    PASK, JA
    AMERICAN CERAMIC SOCIETY BULLETIN, 1977, 56 (03): : 295 - 295
  • [10] RAPID CRYSTALLIZATION OF SIO2-AL2O3 GLASSES
    TAKAMORI, T
    ROY, R
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1973, 56 (12) : 639 - 644