Cu-Based Ternary Heterostructures for High-Performance Asymmetric Supercapacitors

被引:3
|
作者
Yang, Yu [1 ]
Liu, Lingran [1 ]
Li, Songjun [1 ]
Zhu, Maiyong [1 ]
机构
[1] Jiangsu Univ, Sch Mat Sci & Engn, Zhenjiang 212013, Peoples R China
来源
ACS APPLIED ENERGY MATERIALS | 2024年 / 7卷 / 17期
关键词
copper sulfide; copper selenide; N-doped carbon; heterogeneousstructure; ion exchange; hollowstructure; supercapacitor; METAL-ORGANIC FRAMEWORK; FACILE SYNTHESIS; CARBON NITRIDE; NANOSPHERES; ELECTRODE; SHELL; SPHERES;
D O I
10.1021/acsaem.4c01443
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In view of cost, electrical conductivity, and environmental friendliness, copper-based heterostructures are suitable alternatives to toxic ruthenium-based materials in a variety of applications, such as catalysis, biological imaging, energy conversion, and storage. The primary hindrances limiting energy-storage performance are heterostructures with irregular sizes, shapes, and compositions. Here, we introduce a three-step strategy to synthesize CuS2@Cu7Se4@NC hollow heterostructures, starting from Cu2O nanocubes and proceeding through two anion exchanges and a carbon coating step. Taking advantage of the electrical synergistic effect and hollow structures, the as-synthesized CuS2@Cu7Se4@NC hollow heterostructures exhibit an excellent electrochemical performance when utilized as a supercapacitor electrode, achieving a high specific capacitance of 660 F g(-1) at 1 A g(-1) with a good rate capability and excellent cycling stability (retaining 72.6% of its initial capacitance after 4000 charge-discharge cycles). By coupling with commercially activated carbon (AC), an asymmetric supercapacitor device was constructed (CuS2@Cu7Se4@NC//AC) using KOH-PVA as an electrolyte, which delivers an elevated energy density at a power density of 599.7 W kg(-1) and reasonable cycling stability (77.6% retention, 4000 cycles at 10 A g(-1)), suggesting a wide range of potential uses for the CuS2@Cu7Se4@NC electrode in supercapacitors and associated energy applications.
引用
收藏
页码:7307 / 7315
页数:9
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