Facile synthesis and characterization of Cu2Se thin films and self-powered p-Cu2Se/n-Si heterojunction with high-performance photoresponse

被引：2

作者：

Lin, Der-Yuh ^{[1
]}

Shih, Yu-Tai ^{[2
]}

Qiu, De-Jin ^{[1
]}

Kao, Yee-Mou ^{[2
]}

Hwang, Sheng-Beng ^{[3
]}

Kao, Ming-Cheng ^{[4
]}

Lin, Chia-Feng ^{[5
]}

机构：

[1] Natl Changhua Univ Educ, Dept Elect Engn, Changhua 500208, Taiwan

[2] Natl Changhua Univ Educ, Dept Phys, Changhua 500207, Taiwan

[3] Chien Kuo Technol Univ, Dept Elect Engn, Changhua 500020, Taiwan

[4] Chaoyang Univ Technol, Coll Aviat, Dept Informat & Commun Engn, Taichung 413310, Taiwan

[5] Natl Chung Hsing Univ, Dept Mat Sci & Engn, Taichung 40227, Taiwan

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2024年 / 57卷 / 43期

关键词：

chemical vapor deposition; Cu2Se thin films; p-Cu2Se/n-Si heterojunction; photoelectric properties; self-powered attribute; photoresponsive performance; ULTRAHIGH THERMOELECTRIC PERFORMANCE; COPPER SELENIDE; ELECTRONIC-STRUCTURE; OPTICAL-PROPERTIES; HIGH-TEMPERATURE; CU2-XSE; ELECTRODEPOSITION; PHOTODETECTOR; DEPOSITION; SCATTERING;

D O I：

10.1088/1361-6463/ad687c

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A facile, cost-effective, and scalable chemical vapor deposition technique was used to synthesize p-type Cu2Se thin films on glass and n-type Si substrates. Thorough characterization confirmed the films' beta-phase structure with the correct stoichiometric ratio and exceptional crystalline quality, exhibiting behavior akin to a degenerate semiconductor. Measurements unveiled a work function of 4.83 eV and a bandgap of 2.13 eV for Cu2Se. The fabrication of a p-Cu2Se/n-Si heterojunction was achieved by depositing the p-type Cu2Se thin film onto the n-type Si substrate. The resulting heterostructure displayed rectification behavior, and its energy band diagram resembled a Schottky diode. Further exploration into its photoelectric properties showcased the p-Cu2Se/n-Si heterostructure's favorable self-powered attribute, characterized by fast, steady, reproducible, sensitive, and robust photoresponsive performance. Consequently, it proves highly suitable for applications in high-frequency photodetectors. Additionally, the p-Cu2Se/n-Si heterojunction's photovoltaic power conversion efficiency exceeded the reported values of the CuO/Si and Cu2O/Si systems. Here, this study contributes significantly to the pivotal evaluation of p-Cu2Se/n-Si heterostructures for promising optoelectronic applications

引用

页数：11

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