Monolithic full-color micro-LED displays featuring three-dimensional chip bonding and quantum dot-based color conversion layer

被引：3

作者：

Guo, Yan ^{[1
]}

Yu, Junchi ^{[1
,2
]}

Huang, Lei ^{[1
]}

Liu, Zexiang ^{[1
]}

Gai, Zhihui ^{[3
]}

Zhi, Ting ^{[4
,5
]}

Zhou, Yugang ^{[1
]}

Tao, Tao ^{[1
,2
]}

Liu, Bin ^{[1
,2
]}

Zhang, Rong ^{[1
]}

Zheng, Youdou ^{[1
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210023, Peoples R China

[2] Nanjing Univ, Nanjing Natl Lab Microstruct, Nanjing 210093, Peoples R China

[3] Nanjing Univ, Microfabricat & Integrat Technol Ctr, Nanjing 210023, Peoples R China

[4] Nanjing Univ Posts & Telecommun, Coll Elect & Opt Engn, Nanjing 210023, Peoples R China

[5] Nanjing Univ Posts & Telecommun, Coll Flexible Elect, Nanjing 210023, Peoples R China

来源：

OPTICS EXPRESS | 2024年 / 32卷 / 16期

关键词：

LIGHT;

D O I：

10.1364/OE.530687

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

What we believe to be a novel fabrication process for monolithic full-color (RGB) micro-LED (mu LED) display technology, featuring three-dimensional (3D) and quantum dot (QD)-based color conversion layer, has been proposed. This method offers advantages such as a wide color gamut, high pixel density, high yield, and low cost. A 16 x 16 passive matrix (PM) RGB mu LED array, with a pitch size of 80 mu m and a pixel density of 328 pixels per inch (PPI), has been successfully realized using flip-chip bonding technology. When measuring the electroluminescence (EL) spectra of the green and red pixels with the addition of color filters, the color gamut can achieve a maximum of 124% of the National Television System Committee (NTSC) standard. Additionally, this process significantly reduces the risk of damage to the QD film during photolithography compared to using two different colored QDs for RGB mu LED arrays. The proposed manufacturing process shows considerable promise for commercialization.

引用

页码：27662 / 27669

页数：8